Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

Sukhyung Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al<inf>2</inf>O<inf>3</inf>/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

Original languageEnglish
Article number055019
JournalSemiconductor Science and Technology
Volume30
Issue number5
DOIs
Publication statusPublished - 2015 May 1

Fingerprint

Silicon
Nanowires
filaments
nanowires
random access memory
low resistance
Data storage equipment
Electrodes
electrodes
silicon
endurance
apexes
Durability
temperature dependence
cycles
Temperature

Keywords

  • metallic filament
  • nanowire
  • ReRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes. / Park, Sukhyung; Cho, Kyoungah; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 30, No. 5, 055019, 01.05.2015.

Research output: Contribution to journalArticle

@article{cfdb5acb71f745b8a58b2634b0296842,
title = "Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes",
abstract = "In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.",
keywords = "metallic filament, nanowire, ReRAM",
author = "Sukhyung Park and Kyoungah Cho and Sangsig Kim",
year = "2015",
month = "5",
day = "1",
doi = "10.1088/0268-1242/30/5/055019",
language = "English",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

AU - Park, Sukhyung

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2015/5/1

Y1 - 2015/5/1

N2 - In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

AB - In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al2O3/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

KW - metallic filament

KW - nanowire

KW - ReRAM

UR - http://www.scopus.com/inward/record.url?scp=84928786711&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928786711&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/5/055019

DO - 10.1088/0268-1242/30/5/055019

M3 - Article

AN - SCOPUS:84928786711

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 055019

ER -