Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes

Sukhyung Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, we demonstrate the bipolar resistive switching characteristics of flexible resistive random access memory (ReRAM) devices, whose bottom electrodes are made of silicon nanowires (Si NWs) with a triangular structure, which offer preferential sites for the filaments. The temperature dependence of the low resistance state (LRS) of the resistive Al<inf>2</inf>O<inf>3</inf>/ZnO bilayers of ReRAM devices reveals that Ag filaments originating from the top Ag electrodes are responsible for bipolar resistive switching. With respect to the endurance characteristics of the LRS, resistance fluctuation is negligible because of the filaments generated at the specific sites of the vertices of the Si NW bottom electrodes. In addition, the resistive switching characteristics are maintained even after 1000 bending cycles.

Original languageEnglish
Article number055019
JournalSemiconductor Science and Technology
Volume30
Issue number5
DOIs
Publication statusPublished - 2015 May 1

Keywords

  • metallic filament
  • nanowire
  • ReRAM

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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