Memory characteristics of MIS capacitors with parylene gate material

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages422-423
Number of pages2
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Capacitance
  • Gold
  • Memory
  • Nanoparticle
  • Parylene

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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  • Cite this

    Park, B., Im, K. J., Cho, K., & Kim, S. (2006). Memory characteristics of MIS capacitors with parylene gate material. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 422-423). [4388797] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388797