Memory characteristics of MIS capacitors with parylene gate material

Byoungjun Park, Ki Ju Im, Kyoungah Cho, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Memory characteristics of gold nanoparticles-embedded metal-insulator- semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages422-423
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Capacitors
Metals
Gold
Semiconductor materials
Data storage equipment
Electric potential
Nanoparticles
Capacitance
Insulating materials
Hysteresis
Polymers
Current density
Electrodes
parylene
Electrons

Keywords

  • Capacitance
  • Gold
  • Memory
  • Nanoparticle
  • Parylene

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Park, B., Im, K. J., Cho, K., & Kim, S. (2006). Memory characteristics of MIS capacitors with parylene gate material. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 422-423). [4388797] https://doi.org/10.1109/NMDC.2006.4388797

Memory characteristics of MIS capacitors with parylene gate material. / Park, Byoungjun; Im, Ki Ju; Cho, Kyoungah; Kim, Sangsig.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 422-423 4388797.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, B, Im, KJ, Cho, K & Kim, S 2006, Memory characteristics of MIS capacitors with parylene gate material. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388797, pp. 422-423, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388797
Park B, Im KJ, Cho K, Kim S. Memory characteristics of MIS capacitors with parylene gate material. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 422-423. 4388797 https://doi.org/10.1109/NMDC.2006.4388797
Park, Byoungjun ; Im, Ki Ju ; Cho, Kyoungah ; Kim, Sangsig. / Memory characteristics of MIS capacitors with parylene gate material. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 422-423
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