Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers

Byoungjun Park, Samjong Choi, Hye Ryoung Lee, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Ge nanocrystals (NCs) embedded in Al2O3 gate oxide layers used as the floating gate layers were prepared by the thermal annealing of Ge ions implanted in the gate oxide layers. Capacitance versus voltage (C - V) curves of the Ge NC-embedded metal-oxide-semiconductor (MOS) capacitors were characterized in this work. The C - V curves of the NC-embedded MOS capacitor show counterclockwise hysteresis loops at various sweep voltages, which indicates the presence of charge storage in the Ge NCs caused by the Fowler-Nordheim tunneling of electrons between the p-type Si substrate and the Ge NCs. In addition, capacitance versus time measurements were made for the Ge NC-embedded MOS capacitor to investigate its retention characteristics.

Original languageEnglish
Pages (from-to)550-552
Number of pages3
JournalSolid State Communications
Volume143
Issue number11-12
DOIs
Publication statusPublished - 2007 Sep 1

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metal oxide semiconductors
Nanocrystals
capacitors
nanocrystals
Capacitors
Metals
Data storage equipment
capacitance
Oxides
Electric potential
electric potential
Capacitance
Capacitance measurement
oxides
curves
Hysteresis loops
Time measurement
Field emission
floating
Oxide semiconductors

Keywords

  • A. Nanostructures
  • A. Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers. / Park, Byoungjun; Choi, Samjong; Lee, Hye Ryoung; Cho, Kyoungah; Kim, Sangsig.

In: Solid State Communications, Vol. 143, No. 11-12, 01.09.2007, p. 550-552.

Research output: Contribution to journalArticle

Park, Byoungjun ; Choi, Samjong ; Lee, Hye Ryoung ; Cho, Kyoungah ; Kim, Sangsig. / Memory characteristics of MOS capacitors with Ge nanocrystal-embedded Al2O3 gate layers. In: Solid State Communications. 2007 ; Vol. 143, No. 11-12. pp. 550-552.
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AB - Ge nanocrystals (NCs) embedded in Al2O3 gate oxide layers used as the floating gate layers were prepared by the thermal annealing of Ge ions implanted in the gate oxide layers. Capacitance versus voltage (C - V) curves of the Ge NC-embedded metal-oxide-semiconductor (MOS) capacitors were characterized in this work. The C - V curves of the NC-embedded MOS capacitor show counterclockwise hysteresis loops at various sweep voltages, which indicates the presence of charge storage in the Ge NCs caused by the Fowler-Nordheim tunneling of electrons between the p-type Si substrate and the Ge NCs. In addition, capacitance versus time measurements were made for the Ge NC-embedded MOS capacitor to investigate its retention characteristics.

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