Abstract
The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.
| Original language | English |
|---|---|
| Pages (from-to) | 1334-1337 |
| Number of pages | 4 |
| Journal | Current Applied Physics |
| Volume | 9 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2009 Nov 1 |
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Keywords
- Memory
- Nanoparticle
- Platinum
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
Cite this
Memory characteristics of platinum nanoparticle-embedded MOS capacitors. / Park, Byoungjun; Cho, Kyoungah; Koo, Yong Seo; Kim, Sangsig.
In: Current Applied Physics, Vol. 9, No. 6, 01.11.2009, p. 1334-1337.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Memory characteristics of platinum nanoparticle-embedded MOS capacitors
AU - Park, Byoungjun
AU - Cho, Kyoungah
AU - Koo, Yong Seo
AU - Kim, Sangsig
PY - 2009/11/1
Y1 - 2009/11/1
N2 - The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.
AB - The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.
KW - Memory
KW - Nanoparticle
KW - Platinum
UR - http://www.scopus.com/inward/record.url?scp=67349256765&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=67349256765&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2009.02.013
DO - 10.1016/j.cap.2009.02.013
M3 - Article
AN - SCOPUS:67349256765
VL - 9
SP - 1334
EP - 1337
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
IS - 6
ER -