Memory characteristics of platinum nanoparticle-embedded MOS capacitors

Byoungjun Park, Kyoungah Cho, Yong Seo Koo, Sangsig Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.

Original languageEnglish
Pages (from-to)1334-1337
Number of pages4
JournalCurrent Applied Physics
Volume9
Issue number6
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

Platinum
metal oxide semiconductors
capacitors
platinum
Capacitors
Metals
Nanoparticles
Data storage equipment
nanoparticles
Capacitance
capacitance
Electric potential
electric potential
curves
Electrons
shift
Oxides
floating
Hysteresis
electrons

Keywords

  • Memory
  • Nanoparticle
  • Platinum

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Memory characteristics of platinum nanoparticle-embedded MOS capacitors. / Park, Byoungjun; Cho, Kyoungah; Koo, Yong Seo; Kim, Sangsig.

In: Current Applied Physics, Vol. 9, No. 6, 01.11.2009, p. 1334-1337.

Research output: Contribution to journalArticle

Park, Byoungjun ; Cho, Kyoungah ; Koo, Yong Seo ; Kim, Sangsig. / Memory characteristics of platinum nanoparticle-embedded MOS capacitors. In: Current Applied Physics. 2009 ; Vol. 9, No. 6. pp. 1334-1337.
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