Memory characteristics of platinum nanoparticle-embedded MOS capacitors

Byoungjun Park; Kyoungah Cho; Yong Seo Koo; Sangsig Kim

doi:10.1016/j.cap.2009.02.013

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

Byoungjun Park, Kyoungah Cho, Yong Seo Koo, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.

Original language	English
Pages (from-to)	1334-1337
Number of pages	4
Journal	Current Applied Physics
Volume	9
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2009.02.013
Publication status	Published - 2009 Nov

Keywords

Memory
Nanoparticle
Platinum

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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@article{7955cf96c5304c2991d9455a2f901824,

title = "Memory characteristics of platinum nanoparticle-embedded MOS capacitors",

abstract = "The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.",

keywords = "Memory, Nanoparticle, Platinum",

author = "Byoungjun Park and Kyoungah Cho and Koo, {Yong Seo} and Sangsig Kim",

note = "Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601) and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2008)). This work was also supported by the Nano R&D Program (M10703000980-07M0300-98010).",

year = "2009",

month = nov,

doi = "10.1016/j.cap.2009.02.013",

language = "English",

volume = "9",

pages = "1334--1337",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "6",

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TY - JOUR

T1 - Memory characteristics of platinum nanoparticle-embedded MOS capacitors

AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Koo, Yong Seo

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601) and the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2008)). This work was also supported by the Nano R&D Program (M10703000980-07M0300-98010).

PY - 2009/11

Y1 - 2009/11

N2 - The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.

AB - The capacitance characteristics of platinum nanoparticle (NP)-embedded metal-oxide-semiconductor (MOS) capacitors with gate Al2O3 layers are studied in this work. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C-V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.

KW - Memory

KW - Nanoparticle

KW - Platinum

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U2 - 10.1016/j.cap.2009.02.013

DO - 10.1016/j.cap.2009.02.013

M3 - Article

AN - SCOPUS:67349256765

VL - 9

SP - 1334

EP - 1337

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 6

ER -

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

Abstract

Keywords

ASJC Scopus subject areas

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