Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature

Sungsu Kim, Kyoungah Cho, Kiyeol Kwak, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 12 cm -2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 4 s.

Original languageEnglish
Pages (from-to)162-164
Number of pages3
JournalTransactions on Electrical and Electronic Materials
Volume13
Issue number3
DOIs
Publication statusPublished - 2012 Jun 1

Keywords

  • Memory
  • Nanoparticle
  • Pt
  • Sputter

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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