Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature

Sungsu Kim; Kyoungah Cho; Kiyeol Kwak; Sangsig Kim

doi:10.4313/TEEM.2012.13.3.162

Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature

Sungsu Kim, Kyoungah Cho, Kiyeol Kwak, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 ¹² cm ^-2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 ⁴ s.

Original language	English
Pages (from-to)	162-164
Number of pages	3
Journal	Transactions on Electrical and Electronic Materials
Volume	13
Issue number	3
DOIs	https://doi.org/10.4313/TEEM.2012.13.3.162
Publication status	Published - 2012 Jun

Keywords

Memory
Nanoparticle
Pt
Sputter

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.4313/TEEM.2012.13.3.162

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abstract = "In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 12 cm -2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 4 s.",

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AU - Kwak, Kiyeol

AU - Kim, Sangsig

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N2 - In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 12 cm -2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 4 s.

AB - In this study, we fabricate Pt nanoparticle (NP)-embedded MOS capacitors at room temperature and investigate their memory characteristics. The Pt NPs are separated from each other and situated between the tunnel and control oxide layers. The average size and density of the Pt NPs are 4 nm and 3.2×10 12 cm -2, respectively. Counterclockwise hysteresis with a width of 3.3 V is observed in the high-frequency capacitance-voltage curve of the Pt NP-embedded MOS capacitor. Moreover, more than 93% of the charge remains even after 10 4 s.

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KW - Nanoparticle

KW - Pt

KW - Sputter

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JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

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ER -

Memory characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature

Abstract

Keywords

ASJC Scopus subject areas

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