In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n+-p-n+ silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~105 and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications.
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