Memory characteristics of silicon nanowire transistors generated by weak impact ionization

Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Sangsig Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n+-p-n+ silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~105 and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications.

Original languageEnglish
Article number12436
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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random access memory
nanowires
transistors
field effect transistors
ionization
silicon
positive feedback

ASJC Scopus subject areas

  • General

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Memory characteristics of silicon nanowire transistors generated by weak impact ionization. / Lim, Doohyeok; Kim, Minsuk; Kim, Yoonjoong; Kim, Sangsig.

In: Scientific Reports, Vol. 7, No. 1, 12436, 01.12.2017.

Research output: Contribution to journalArticle

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