Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles

Donghyuk Yeom, Jeongmin Kang, Changjoon Yoon, Byoungjun Park, Kihyun Keem, Dong Young Jeong, Mihyun Kim, Eui Kwan Koh, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated top-gate single ZnO nanowire-based FETs embedded with Au nanoparticles as a floating gate and characterized their memory effects. Our experimental results demonstrate that the fabricated devices in this study are one of promising devices for the application in the nonvolatile memory devices of next generation.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC
Pages124-125
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Events20th International Microprocesses and Nanotechnology Conference, MNC 2007 - Kyoto, Japan
Duration: 2007 Nov 52007 Nov 8

Other

Others20th International Microprocesses and Nanotechnology Conference, MNC 2007
CountryJapan
CityKyoto
Period07/11/507/11/8

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Yeom, D., Kang, J., Yoon, C., Park, B., Keem, K., Jeong, D. Y., Kim, M., Koh, E. K., & Kim, S. (2007). Memory characteristics of top-gate ZnO nanowire field-effect transistors with floating gate nodes of Au nanoparticles. In Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC (pp. 124-125). [4456135] https://doi.org/10.1109/IMNC.2007.4456135