Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Jin Hyuck Heo, Dong Hee Shin, Sang Hwa Moon, Min Ho Lee, Do Hun Kim, Seol Hee Oh, William Jo, Sang Hyuk Im

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The crystal grain size of CH 3 NH 3 PbI 3 (MAPbI 3 ) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI 3 OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in 2 storage capacity, >600 cycles endurance, >10 4 s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage.

Original languageEnglish
Article number16586
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

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Crystallization
Data storage equipment
Crystals
Bias voltage
Durability
perovskite

ASJC Scopus subject areas

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Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory. / Heo, Jin Hyuck; Shin, Dong Hee; Moon, Sang Hwa; Lee, Min Ho; Kim, Do Hun; Oh, Seol Hee; Jo, William; Im, Sang Hyuk.

In: Scientific Reports, Vol. 7, No. 1, 16586, 01.12.2017.

Research output: Contribution to journalArticle

Heo, Jin Hyuck ; Shin, Dong Hee ; Moon, Sang Hwa ; Lee, Min Ho ; Kim, Do Hun ; Oh, Seol Hee ; Jo, William ; Im, Sang Hyuk. / Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory. In: Scientific Reports. 2017 ; Vol. 7, No. 1.
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AU - Jo, William

AU - Im, Sang Hyuk

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