Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

Jin Hyuck Heo, Dong Hee Shin, Sang Hwa Moon, Min Ho Lee, Do Hun Kim, Seol Hee Oh, William Jo, Sang Hyuk Im

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20 Citations (Scopus)

Abstract

The crystal grain size of CH3NH3PbI3 (MAPbI3) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ∼60 nm to ∼600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI3 OHP non-volatile resistive random access memory with ∼60 nm crystal grain size exhibited >0.1 TB/in2 storage capacity, >600 cycles endurance, >104 s data retention time, ∼0.7 V set, and ∼-0.61 V re-set bias voltage.

Original languageEnglish
Article number16586
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

ASJC Scopus subject areas

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