TY - JOUR
T1 - Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
AU - Huh, Woong
AU - Lee, Donghun
AU - Lee, Chul Ho
N1 - Funding Information:
W.H. and D.L. contributed equally to this work. This work was supported by the KU-KIST school project, the Korea University Future Research Grant, and the National Research Foundation (NRF) of Korea (NRF-2020R1A2C2009389 and 2017R1A5A101486214 (SRC Program: vdWMRC Center)). D.L. acknowledges support from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2020R1I1A1A01071872).
PY - 2020/12/22
Y1 - 2020/12/22
N2 - The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.
AB - The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.
KW - 2D materials
KW - artificial synapses
KW - memristors
KW - neuromorphic electronics
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85091607882&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85091607882&partnerID=8YFLogxK
U2 - 10.1002/adma.202002092
DO - 10.1002/adma.202002092
M3 - Review article
AN - SCOPUS:85091607882
VL - 32
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 51
M1 - 2002092
ER -