Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

Jun Young Choi, Byeong Hyoen Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)


We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (FE) showed 21.4 cm2/V s, and Vth shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.

Original languageEnglish
Pages (from-to)3397-3400
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number5
Publication statusPublished - 2017



  • Metal Capping
  • Oxide Semiconductor
  • SiInZnO
  • Thin Film Transistors

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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