Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c

Jun Young Choi, Byeong Hyoen Lee, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We fabricated amorphous silicon-indium-zinc-oxide (a-SIZO) thin film transistors (TFTs) by RF sputtering at the low processing temperature of 150 °C. Metal capping (MC) structure on TFTs showed enhanced performance. Even at low annealing temperature, the field-effect mobility (FE) showed 21.4 cm2/V s, and Vth shift was only 1.3 V. We attribute the enhancement of mobility to the metal capping layer, which effectively prevents the ambient effect of hydrogen and water vapor.

Original languageEnglish
Pages (from-to)3397-3400
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number5
DOIs
Publication statusPublished - 2017

Fingerprint

Zinc Oxide
Semiconductors
Indium
Silicon
Thin film transistors
Zinc oxide
zinc oxides
indium oxides
transistors
Metals
Temperature
Steam
silicon
thin films
Amorphous silicon
metals
Water vapor
Oxide films
amorphous silicon
Sputtering

Keywords

  • Metal Capping
  • Oxide Semiconductor
  • SiInZnO
  • Thin Film Transistors

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Metal capping on silicon indium zinc oxide semiconductor for high performance thin film transistors processed at 150 °c. / Choi, Jun Young; Lee, Byeong Hyoen; Kim, Sangsig; Lee, Sang Yeol.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, 2017, p. 3397-3400.

Research output: Contribution to journalArticle

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