Metal-Insulator-Semiconductor Coaxial Microfibers Based on Self-Organization of Organic Semiconductor: Polymer Blend for Weavable, Fibriform Organic Field-Effect Transistors

Hae Min Kim, Hyun Wook Kang, Do Kyung Hwang, Ho Sun Lim, Byeong Kwon Ju, Jung Ah Lim

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

With the increasing importance of electronic textiles as an ideal platform for wearable electronic devices, requirements for the development of functional electronic fibers with multilayered structures are increasing. In this paper, metal-polymer insulator-organic semiconductor (MIS) coaxial microfibers using the self-organization of organic semiconductor:insulating polymer blends for weavable, fibriform organic field-effect transistors (FETs) are demonstrated. A holistic process for MIS coaxial microfiber fabrication, including surface modification of gold microfiber thin-film coating on the microfiber using a die-coating system, and the self-organization of organic semiconductor-insulator polymer blend is presented. Vertical phase-separation of the organic semiconductor:insulating polymer blend film wrapping the metal microfibers provides a coaxial bilayer structure of gate dielectric (inside) and organic semiconductor (outside) with intimate interfacial contact. It is determined that the fibriform FETs based on MIS coaxial microfiber exhibit good charge carrier mobilities that approach the values of typical devices with planar substrate. It additionally exhibits electrical property uniformity over the entire fiber surface and improved bending durability. Fibriform organic FET embedded in a textile is demonstrated by weaving MIS coaxial microfibers with cotton and conducting threads, which verifies the feasibility of MIS coaxial microfiber for use in electronic textile applications.

Original languageEnglish
JournalAdvanced Functional Materials
DOIs
Publication statusAccepted/In press - 2016

Fingerprint

microfibers
Organic field effect transistors
Semiconducting organic compounds
polymer blends
organic semiconductors
MIS (semiconductors)
Polymer blends
field effect transistors
Metals
Semiconductor materials
insulators
Polymers
textiles
metals
polymers
electronics
weaving
Coatings
fibers
Fibers

Keywords

  • Electronic fibers
  • Fluid coating on fiber
  • Organic field-effect transistor
  • Phase-separation
  • Polymer blend

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Metal-Insulator-Semiconductor Coaxial Microfibers Based on Self-Organization of Organic Semiconductor: Polymer Blend for Weavable, Fibriform Organic Field-Effect Transistors",
abstract = "With the increasing importance of electronic textiles as an ideal platform for wearable electronic devices, requirements for the development of functional electronic fibers with multilayered structures are increasing. In this paper, metal-polymer insulator-organic semiconductor (MIS) coaxial microfibers using the self-organization of organic semiconductor:insulating polymer blends for weavable, fibriform organic field-effect transistors (FETs) are demonstrated. A holistic process for MIS coaxial microfiber fabrication, including surface modification of gold microfiber thin-film coating on the microfiber using a die-coating system, and the self-organization of organic semiconductor-insulator polymer blend is presented. Vertical phase-separation of the organic semiconductor:insulating polymer blend film wrapping the metal microfibers provides a coaxial bilayer structure of gate dielectric (inside) and organic semiconductor (outside) with intimate interfacial contact. It is determined that the fibriform FETs based on MIS coaxial microfiber exhibit good charge carrier mobilities that approach the values of typical devices with planar substrate. It additionally exhibits electrical property uniformity over the entire fiber surface and improved bending durability. Fibriform organic FET embedded in a textile is demonstrated by weaving MIS coaxial microfibers with cotton and conducting threads, which verifies the feasibility of MIS coaxial microfiber for use in electronic textile applications.",
keywords = "Electronic fibers, Fluid coating on fiber, Organic field-effect transistor, Phase-separation, Polymer blend",
author = "Kim, {Hae Min} and Kang, {Hyun Wook} and Hwang, {Do Kyung} and Lim, {Ho Sun} and Ju, {Byeong Kwon} and Lim, {Jung Ah}",
year = "2016",
doi = "10.1002/adfm.201504972",
language = "English",
journal = "Advanced Functional Materials",
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T1 - Metal-Insulator-Semiconductor Coaxial Microfibers Based on Self-Organization of Organic Semiconductor

T2 - Polymer Blend for Weavable, Fibriform Organic Field-Effect Transistors

AU - Kim, Hae Min

AU - Kang, Hyun Wook

AU - Hwang, Do Kyung

AU - Lim, Ho Sun

AU - Ju, Byeong Kwon

AU - Lim, Jung Ah

PY - 2016

Y1 - 2016

N2 - With the increasing importance of electronic textiles as an ideal platform for wearable electronic devices, requirements for the development of functional electronic fibers with multilayered structures are increasing. In this paper, metal-polymer insulator-organic semiconductor (MIS) coaxial microfibers using the self-organization of organic semiconductor:insulating polymer blends for weavable, fibriform organic field-effect transistors (FETs) are demonstrated. A holistic process for MIS coaxial microfiber fabrication, including surface modification of gold microfiber thin-film coating on the microfiber using a die-coating system, and the self-organization of organic semiconductor-insulator polymer blend is presented. Vertical phase-separation of the organic semiconductor:insulating polymer blend film wrapping the metal microfibers provides a coaxial bilayer structure of gate dielectric (inside) and organic semiconductor (outside) with intimate interfacial contact. It is determined that the fibriform FETs based on MIS coaxial microfiber exhibit good charge carrier mobilities that approach the values of typical devices with planar substrate. It additionally exhibits electrical property uniformity over the entire fiber surface and improved bending durability. Fibriform organic FET embedded in a textile is demonstrated by weaving MIS coaxial microfibers with cotton and conducting threads, which verifies the feasibility of MIS coaxial microfiber for use in electronic textile applications.

AB - With the increasing importance of electronic textiles as an ideal platform for wearable electronic devices, requirements for the development of functional electronic fibers with multilayered structures are increasing. In this paper, metal-polymer insulator-organic semiconductor (MIS) coaxial microfibers using the self-organization of organic semiconductor:insulating polymer blends for weavable, fibriform organic field-effect transistors (FETs) are demonstrated. A holistic process for MIS coaxial microfiber fabrication, including surface modification of gold microfiber thin-film coating on the microfiber using a die-coating system, and the self-organization of organic semiconductor-insulator polymer blend is presented. Vertical phase-separation of the organic semiconductor:insulating polymer blend film wrapping the metal microfibers provides a coaxial bilayer structure of gate dielectric (inside) and organic semiconductor (outside) with intimate interfacial contact. It is determined that the fibriform FETs based on MIS coaxial microfiber exhibit good charge carrier mobilities that approach the values of typical devices with planar substrate. It additionally exhibits electrical property uniformity over the entire fiber surface and improved bending durability. Fibriform organic FET embedded in a textile is demonstrated by weaving MIS coaxial microfibers with cotton and conducting threads, which verifies the feasibility of MIS coaxial microfiber for use in electronic textile applications.

KW - Electronic fibers

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KW - Phase-separation

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