Metal-optic cavity for a high efficiency sub-fF germanium photodiode on a silicon waveguide

Ryan Going, Myung-Ki Kim, Ming C. Wu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We propose two designs of nanoscale sub-fF germanium photodiodes which are efficiently integrated with silicon waveguides. The metal-optic cavities are simulated with the finite difference time domain method and optimized using critical coupling concepts. One design is for a metal semiconductor metal photodiode with <200 aF capacitance, 39% external quantum efficiency, and 0.588 (λ/n)3 cavity volume at 1.5μm wavelength. The second design is for a vertical p-i-n photodiode with <100 aF capacitance, 51% external quantum efficiency, and 0.804 (λ/n)3 cavity volume. Both designs make use of CMOS compatible materials germanium and aluminum metal for potential future monolithic integration with silicon photonics.

Original languageEnglish
Pages (from-to)22429-22440
Number of pages12
JournalOptics Express
Volume21
Issue number19
DOIs
Publication statusPublished - 2013 Sep 23
Externally publishedYes

Fingerprint

photodiodes
germanium
optics
waveguides
cavities
silicon
metals
quantum efficiency
capacitance
finite difference time domain method
CMOS
photonics
aluminum
wavelengths

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Metal-optic cavity for a high efficiency sub-fF germanium photodiode on a silicon waveguide. / Going, Ryan; Kim, Myung-Ki; Wu, Ming C.

In: Optics Express, Vol. 21, No. 19, 23.09.2013, p. 22429-22440.

Research output: Contribution to journalArticle

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