Metal organic vapor phase epitaxy of BiSbTe3 films on (001) GaAs vicinal substrates

Jeong Hun Kim, Dae Yong Jeong, Jin Sang Kim, Byeong Kwon Ju

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We have investigated the growth of BiSb Te3 films by metal organic vapor phase epitaxy on (001) GaAs vicinal substrates. A detailed experimental study of the surface morphologies of BiSb Te3 films grown on GaAs (001) vicinal surfaces was carried out and is discussed in this paper with a view to understanding the step-step interaction kinetics that result in step bunching. BiSb Te3 layers grown on nominal (001) GaAs substrates exhibit triangular facet structures consisting of atomically flat plateau areas separated by steps. In contrast, the growth of films on vicinal substrates was found to result in regular arrays of terrace step structures. The formation of step bunches and rectangular terraces on such film surface is attributed to the preferential incorporation of adatoms at step or kink sites and lateral growth rate anisotropy.

Original languageEnglish
Article number123501
JournalJournal of Applied Physics
Volume100
Issue number12
DOIs
Publication statusPublished - 2006 Dec 1

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vapor phase epitaxy
metals
bunching
adatoms
flat surfaces
plateaus
anisotropy
kinetics
interactions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Metal organic vapor phase epitaxy of BiSbTe3 films on (001) GaAs vicinal substrates. / Kim, Jeong Hun; Jeong, Dae Yong; Kim, Jin Sang; Ju, Byeong Kwon.

In: Journal of Applied Physics, Vol. 100, No. 12, 123501, 01.12.2006.

Research output: Contribution to journalArticle

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