Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors

Sohee Kim, Taewook Ha, Sungmi Yoo, Jae Won Ka, Jinsoo Kim, Jong Chan Won, Dong Hoon Choi, Kwang Suk Jang, Yun Ho Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al2O3), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al2O3-deposited KPI film. After the surface treatment by ODPA/α-Al2O3, the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10), was increased. Ph-BTBT-C10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm2 V-1 s-1 to 1.26 ± 0.06 cm2 V-1 s-1, after the surface treatment. The surface treatment of α-Al2O3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO2 gate insulators.

Original languageEnglish
Pages (from-to)15521-15529
Number of pages9
JournalPhysical Chemistry Chemical Physics
Volume19
Issue number23
DOIs
Publication statusPublished - 2017

Fingerprint

Self assembled monolayers
Thin film transistors
surface treatment
polyimides
Polyimides
Oxides
metal oxides
Surface treatment
transistors
Metals
insulators
Semiconductors
thin films
Acids
Semiconducting organic compounds
Spin coating
acids
organic semiconductors
Aluminum Oxide
Atomic Force Microscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors. / Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang Suk; Kim, Yun Ho.

In: Physical Chemistry Chemical Physics, Vol. 19, No. 23, 2017, p. 15521-15529.

Research output: Contribution to journalArticle

Kim, Sohee ; Ha, Taewook ; Yoo, Sungmi ; Ka, Jae Won ; Kim, Jinsoo ; Won, Jong Chan ; Choi, Dong Hoon ; Jang, Kwang Suk ; Kim, Yun Ho. / Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors. In: Physical Chemistry Chemical Physics. 2017 ; Vol. 19, No. 23. pp. 15521-15529.
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AU - Choi, Dong Hoon

AU - Jang, Kwang Suk

AU - Kim, Yun Ho

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