Metal oxide thin film phototransistor for remote touch interactive displays

Seung Eon Ahn, Ihun Song, Sanghun Jeon, Youg Woo Jeon, Young Kim, Changjung Kim, Byungki Ryu, Je Hun Lee, Arokia Nathan, Sungsik Lee, Gyu-Tae Kim, U. In Chung

Research output: Contribution to journalArticle

92 Citations (Scopus)


The photoresponse characteristics of metal-oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous-Si-based photo-TFT, the MeO photo-TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high-speed array operation is used, yet maintaining a simple array architecture as a solution for large-area interactive displays.

Original languageEnglish
Pages (from-to)2631-2636
Number of pages6
JournalAdvanced Materials
Issue number19
Publication statusPublished - 2012 May 15



  • amorphous oxide semiconductors
  • In-Ga-Zn-O/In-Zn-O
  • phototransistors
  • remote in-cell touch
  • thin film transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ahn, S. E., Song, I., Jeon, S., Jeon, Y. W., Kim, Y., Kim, C., ... Chung, U. I. (2012). Metal oxide thin film phototransistor for remote touch interactive displays. Advanced Materials, 24(19), 2631-2636.