Abstract
Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.
| Original language | English |
|---|---|
| Pages (from-to) | 901-907 |
| Number of pages | 7 |
| Journal | Journal of the Korean Physical Society |
| Volume | 68 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2016 Apr 1 |
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Keywords
- Brillouin scattering
- Dielectric
- Elastic property
- PDMS
- Relaxation process
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode. / Yoo, Tae Hee; Sang, Byoung In; Wang, Byung Yong; Lim, Dae-Soon; Kang, Hyun Wook; Choi, Won Kook; Lee, Young Tack; Oh, Young Jei; Hwang, Do Kyung.
In: Journal of the Korean Physical Society, Vol. 68, No. 7, 01.04.2016, p. 901-907.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode
AU - Yoo, Tae Hee
AU - Sang, Byoung In
AU - Wang, Byung Yong
AU - Lim, Dae-Soon
AU - Kang, Hyun Wook
AU - Choi, Won Kook
AU - Lee, Young Tack
AU - Oh, Young Jei
AU - Hwang, Do Kyung
PY - 2016/4/1
Y1 - 2016/4/1
N2 - Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.
AB - Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.
KW - Brillouin scattering
KW - Dielectric
KW - Elastic property
KW - PDMS
KW - Relaxation process
UR - http://www.scopus.com/inward/record.url?scp=84962844810&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84962844810&partnerID=8YFLogxK
U2 - 10.3938/jkps.68.901
DO - 10.3938/jkps.68.901
M3 - Article
AN - SCOPUS:84962844810
VL - 68
SP - 901
EP - 907
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 7
ER -