Abstract
Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.
Original language | English |
---|---|
Pages (from-to) | 901-907 |
Number of pages | 7 |
Journal | Journal of the Korean Physical Society |
Volume | 68 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2016 Apr 1 |
Keywords
- Brillouin scattering
- Dielectric
- Elastic property
- PDMS
- Relaxation process
ASJC Scopus subject areas
- Physics and Astronomy(all)