Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

Tae Hee Yoo, Byoung In Sang, Byung Yong Wang, Dae-Soon Lim, Hyun Wook Kang, Won Kook Choi, Young Tack Lee, Young Jei Oh, Do Kyung Hwang

Research output: Contribution to journalArticle

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Abstract

Amorphous InGaZnO (IGZO) metal-oxide-semiconductor thin-film transistors (TFTs) are one of the most promising technologies to replace amorphous and polycrystalline Si TFTs. Recently, TFT-based sensing platforms have been gaining significant interests. Here, we report on IGZO transistor-based pH sensors in aqueous medium. In order to achieve stable operation in aqueous environment and enhance sensitivity, we used Al2O3 grown by using atomic layer deposition (ALD) and a porous Ag nanowire (NW) mesh as the top gate dielectric and electrode layers, respectively. Such devices with a Ag NW mesh at the top gate electrode rapidly respond to the pH of solutions by shifting the turn-on voltage. Furthermore, the output voltage signals induced by the voltage shifts can be directly extracted by implantation of a resistive load inverter.

Original languageEnglish
Pages (from-to)901-907
Number of pages7
JournalJournal of the Korean Physical Society
Volume68
Issue number7
DOIs
Publication statusPublished - 2016 Apr 1

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Keywords

  • Brillouin scattering
  • Dielectric
  • Elastic property
  • PDMS
  • Relaxation process

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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