Metallization contacts to nonpolar a -plane n -type GaN

Hyunsoo Kim, Sung Nam Lee, Yongjo Park, Joon Seop Kwak, Tae Yeon Seong

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We have investigated the electrical characteristics of metallization contacts to nonpolar a -plane and polar c -plane n -type GaN. Pd Schottky diodes and x-ray photoemission spectroscopy measurements show that the Schottky barrier height of the a -plane GaN is lower than that of the c -plane GaN by 0.24 and 0.30 eV, respectively. TiAl Ohmic contacts to the a -plane n-GaN produce lower contact resistivity than that of the c -plane samples when annealed at 500 °C. However, TiAl contacts to the c -plane and a -plane GaN show opposite electrical behavior when annealed at temperatures above 500 °C, which is attributed to the absence of polarization-induced surface charges for a -plane GaN.

Original languageEnglish
Article number032105
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2008 Aug 4

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electric contacts
Schottky diodes
photoelectric emission
electrical resistivity
polarization
spectroscopy
x rays
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Metallization contacts to nonpolar a -plane n -type GaN. / Kim, Hyunsoo; Lee, Sung Nam; Park, Yongjo; Kwak, Joon Seop; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 93, No. 3, 032105, 04.08.2008.

Research output: Contribution to journalArticle

Kim, Hyunsoo ; Lee, Sung Nam ; Park, Yongjo ; Kwak, Joon Seop ; Seong, Tae Yeon. / Metallization contacts to nonpolar a -plane n -type GaN. In: Applied Physics Letters. 2008 ; Vol. 93, No. 3.
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