Metallization contacts to nonpolar a -plane n -type GaN

Hyunsoo Kim, Sung Nam Lee, Yongjo Park, Joon Seop Kwak, Tae Yeon Seong

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48 Citations (Scopus)

Abstract

We have investigated the electrical characteristics of metallization contacts to nonpolar a -plane and polar c -plane n -type GaN. Pd Schottky diodes and x-ray photoemission spectroscopy measurements show that the Schottky barrier height of the a -plane GaN is lower than that of the c -plane GaN by 0.24 and 0.30 eV, respectively. TiAl Ohmic contacts to the a -plane n-GaN produce lower contact resistivity than that of the c -plane samples when annealed at 500 °C. However, TiAl contacts to the c -plane and a -plane GaN show opposite electrical behavior when annealed at temperatures above 500 °C, which is attributed to the absence of polarization-induced surface charges for a -plane GaN.

Original languageEnglish
Article number032105
JournalApplied Physics Letters
Volume93
Issue number3
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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