Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

Ja Soon Jang, Seong Ju Park, Tae Yeon Seong

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3 × 1017cm-3). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ω m2. However, annealing of the contact at 6°C for 2 min results in a resistance of 2.2(± 2.0) × 10-6 Ω cm2. It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600°C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices.

Original languageEnglish
Pages (from-to)2898-2900
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number20
DOIs
Publication statusPublished - 2000 May 15

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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