Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

58 Citations (Scopus)

Abstract

We report on a promising metallization scheme for high-quality Ohmic contacts to surface-treated p-GaN:Mg (2-3 × 1017cm-3). It is shown that the as-deposited Pt/Ru contact produces a specific contact resistance of 7.8(±2.2) × 10-4 Ω m2. However, annealing of the contact at 6°C for 2 min results in a resistance of 2.2(± 2.0) × 10-6 Ω cm2. It is also shown that the light transmittance of the annealed contact is 87.3% at 470 nm. Furthermore, the surface of the contact annealed at 600°C for 30 min is found to be very smooth with a rms roughness of 0.8 nm. These results strongly indicate that the Pt/Ru can be a suitable scheme for the fabrication of high-performance laser diodes or other devices.

Original languageEnglish
Pages (from-to)2898-2900
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number20
Publication statusPublished - 2000 May 15
Externally publishedYes

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low resistance
electric contacts
contact resistance
transmittance
roughness
semiconductor lasers
fabrication
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Metallization scheme for highly low-resistance, transparent, and thermally stable Ohmic contacts to p-GaN. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 76, No. 20, 15.05.2000, p. 2898-2900.

Research output: Contribution to journalArticle

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