Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer

Jin Woo Ju, Joo In Lee, In-Hwan Lee

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated the effects of low-temperature deposited thin InN buffer layer on the material characteristics of the InN epitaxial films grown on a thick GaN/sapphire template by using metalorganic chemical vapor deposition. The InN buffer layer was grown at a fixed temperature of 400 °C with different deposition time. Compared with the InN film without the buffer layer, those with the buffer layer showed a better surface morphology, an increased X-ray diffraction intensity, a decreased background carrier concentration, and an improved photoluminescence characteristics.

Original languageEnglish
Pages (from-to)2291-2294
Number of pages4
JournalThin Solid Films
Volume515
Issue number4
DOIs
Publication statusPublished - 2006 Dec 5
Externally publishedYes

Fingerprint

Aluminum Oxide
Metallorganic chemical vapor deposition
Buffer layers
Sapphire
metalorganic chemical vapor deposition
sapphire
templates
buffers
Epitaxial films
Surface morphology
Carrier concentration
Photoluminescence
photoluminescence
X ray diffraction
Temperature
diffraction
x rays
temperature

Keywords

  • Buffer layer
  • Indium nitride
  • Metal organic chemical vapor deposition
  • Photoluminescene
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Metalorganic chemical vapor deposition of InN on GaN/sapphire template by using thin InN buffer layer. / Ju, Jin Woo; Lee, Joo In; Lee, In-Hwan.

In: Thin Solid Films, Vol. 515, No. 4, 05.12.2006, p. 2291-2294.

Research output: Contribution to journalArticle

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