Metalorganic chemical vapor deposition of ZnO films on Si (111) substrates using 3C-SiC buffer layers

Junjie Zhu, In-Hwan Lee, Ran Yao, Zhuxi Fu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical vapor deposition. The relationship between the quality of ZnO epitaxial layers and that of the SiC buffer layers was investigated. The epitaxial ZnO films were obviously improved by improving the SiC buffer layers. When the quality of the SiC buffer layers was good enough, the effect became less obvious.

Original languageEnglish
Pages (from-to)598-601
Number of pages4
JournalJournal of the Korean Physical Society
Volume50
Issue number3
Publication statusPublished - 2007 Mar 1
Externally publishedYes

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metalorganic chemical vapor deposition
buffers
silicon

Keywords

  • Metalorganic chemical vapor deposition
  • Si substrate
  • SiC buffer layer
  • ZnO films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Metalorganic chemical vapor deposition of ZnO films on Si (111) substrates using 3C-SiC buffer layers. / Zhu, Junjie; Lee, In-Hwan; Yao, Ran; Fu, Zhuxi.

In: Journal of the Korean Physical Society, Vol. 50, No. 3, 01.03.2007, p. 598-601.

Research output: Contribution to journalArticle

@article{5a79fef8e08c4ca58d8c7082ce38a079,
title = "Metalorganic chemical vapor deposition of ZnO films on Si (111) substrates using 3C-SiC buffer layers",
abstract = "Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical vapor deposition. The relationship between the quality of ZnO epitaxial layers and that of the SiC buffer layers was investigated. The epitaxial ZnO films were obviously improved by improving the SiC buffer layers. When the quality of the SiC buffer layers was good enough, the effect became less obvious.",
keywords = "Metalorganic chemical vapor deposition, Si substrate, SiC buffer layer, ZnO films",
author = "Junjie Zhu and In-Hwan Lee and Ran Yao and Zhuxi Fu",
year = "2007",
month = "3",
day = "1",
language = "English",
volume = "50",
pages = "598--601",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "3",

}

TY - JOUR

T1 - Metalorganic chemical vapor deposition of ZnO films on Si (111) substrates using 3C-SiC buffer layers

AU - Zhu, Junjie

AU - Lee, In-Hwan

AU - Yao, Ran

AU - Fu, Zhuxi

PY - 2007/3/1

Y1 - 2007/3/1

N2 - Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical vapor deposition. The relationship between the quality of ZnO epitaxial layers and that of the SiC buffer layers was investigated. The epitaxial ZnO films were obviously improved by improving the SiC buffer layers. When the quality of the SiC buffer layers was good enough, the effect became less obvious.

AB - Epitaxial ZnO films were prepared on Si (111) substrates using epitaxial 3C-SiC buffer layers. In particular, we tried different epitaxial 3C-SiC buffer layers to grow high quality ZnO films on silicon substrates by metal-organic chemical vapor deposition. The relationship between the quality of ZnO epitaxial layers and that of the SiC buffer layers was investigated. The epitaxial ZnO films were obviously improved by improving the SiC buffer layers. When the quality of the SiC buffer layers was good enough, the effect became less obvious.

KW - Metalorganic chemical vapor deposition

KW - Si substrate

KW - SiC buffer layer

KW - ZnO films

UR - http://www.scopus.com/inward/record.url?scp=34147156683&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34147156683&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:34147156683

VL - 50

SP - 598

EP - 601

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -