Metalorganic molecular beam epitaxy of InGaN layers and their optical properties

Min Ho Kim, Jun Kyu Cho, In-Hwan Lee, Seong Ju Park

Research output: Contribution to journalConference article

31 Citations (Scopus)

Abstract

We report on the growth of InGaN/GaN heterostructures on the nitridated α-Al2O3 substrate using metalorganic molecular beam epitaxy (MOMBE) system equipped with an N2 rf-plasma cell. An In incorporation of 41% was achieved without InN phase separation in the InGaN film. The InGaN films showed photoluminescence (PL) spectra corresponding to blue, green, and red colors depending on the In composition. The XRD and PL measurements showed that the red emission from InGaN was originated from the phase-separated InN in the InGaN film.

Original languageEnglish
Pages (from-to)269-272
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume176
Issue number1
DOIs
Publication statusPublished - 1999 Nov 1
Externally publishedYes
EventProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
Duration: 1999 Jul 41999 Jul 9

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Molecular beam epitaxy
molecular beam epitaxy
Optical properties
optical properties
Photoluminescence
photoluminescence
Phase separation
Heterojunctions
Color
Plasmas
color
Substrates
cells
Chemical analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Metalorganic molecular beam epitaxy of InGaN layers and their optical properties. / Kim, Min Ho; Cho, Jun Kyu; Lee, In-Hwan; Park, Seong Ju.

In: Physica Status Solidi (A) Applied Research, Vol. 176, No. 1, 01.11.1999, p. 269-272.

Research output: Contribution to journalConference article

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