Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Yuyin Xi, Lu Liu, Fan Ren, Stephen J. Pearton, Ji Hyun Kim, Amir Dabiran, Peter P. Chow

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

Original languageEnglish
Article number032203
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume31
Issue number3
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

High electron mobility transistors
Schottky diodes
high electron mobility transistors
Diodes
Methane
methane
diodes
Arrhenius plots
plots
activation energy
Activation energy
sensitivity
sensors
Derivatives
Sensors
temperature
Experiments
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes. / Xi, Yuyin; Liu, Lu; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun; Dabiran, Amir; Chow, Peter P.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 3, 032203, 01.05.2013.

Research output: Contribution to journalArticle

@article{24a26c6bc8e64c9e915d2f6dd6e8fcdc,
title = "Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes",
abstract = "Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80{\%}. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.",
author = "Yuyin Xi and Lu Liu and Fan Ren and Pearton, {Stephen J.} and Kim, {Ji Hyun} and Amir Dabiran and Chow, {Peter P.}",
year = "2013",
month = "5",
day = "1",
doi = "10.1116/1.4803743",
language = "English",
volume = "31",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

AU - Xi, Yuyin

AU - Liu, Lu

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Ji Hyun

AU - Dabiran, Amir

AU - Chow, Peter P.

PY - 2013/5/1

Y1 - 2013/5/1

N2 - Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

AB - Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

UR - http://www.scopus.com/inward/record.url?scp=84878355860&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878355860&partnerID=8YFLogxK

U2 - 10.1116/1.4803743

DO - 10.1116/1.4803743

M3 - Article

VL - 31

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 3

M1 - 032203

ER -