Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Yuyin Xi, Lu Liu, Fan Ren, Stephen J. Pearton, Jihyun Kim, Amir Dabiran, Peter P. Chow

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.

Original languageEnglish
Article number032203
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume31
Issue number3
DOIs
Publication statusPublished - 2013 May

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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