MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa, Y. Nakano, M. Ishiko, T. Kachi, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, C. C. Pan, G. T. Chen, J. I. Chyi

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Abstract

The features of MgO/p-GaN enhanced mode metal-oxide semiconductor field-effect transistors (MOSFET) were analyzed. It was found that the GaN-based metal-oxide semiconductor (MOS) transistors had low leakage currents and power consumption along with higher current gain cutoff frequency. It was observed that the MOSFET devices showed better gate and epi/source breakdown characteristics with high quality of gate oxides grown under controlled conditions by molecular beam epitaxy. Analysis shows that at a drain-source voltage of 5 V the maximum transconductance was found to be 5.4 μS mm -1 for GaAs MOSFETs.

Original languageEnglish
Pages (from-to)2919-2921
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number15
DOIs
Publication statusPublished - 2004 Apr 12

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C. C., Chen, G. T., & Chyi, J. I. (2004). MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors. Applied Physics Letters, 84(15), 2919-2921. https://doi.org/10.1063/1.1704876