Micro-Raman spectroscopy and atomic force microscopy characterization of gallium nitride damaged by accelerated gallium ions

Hong Youl Kim, Jaehui Ahn, Ji Hyun Kim

Research output: Contribution to journalArticle

Abstract

Gallium nitride on sapphire was characterized using AFM, SEM and micro-Raman spectroscopy after etching by a NOVA 200 FEI Focused Ion Beam (FIB). Various probe beam currents were used at a 30 kV acceleration voltage. The sidewall of the etched area was rougher and the roughness on the surface of the etched area increased when the probe beam current was increased. The intensity of the E2 2 phonon of micro-Raman spectroscopy decreased when the probe beam current was increased from 10pA, 100 pA, 1 nA to 20 nA. Therefore, it is very important to control the FIB probe current to maximize the etch rate and minimize the damage induced by accelerated Gallium ions.

Original languageEnglish
Pages (from-to)10-12
Number of pages3
JournalJournal of Ceramic Processing Research
Volume9
Issue number1
Publication statusPublished - 2008 Apr 3

Fingerprint

Gallium nitride
Gallium
Raman spectroscopy
Atomic force microscopy
Ions
Focused ion beams
Aluminum Oxide
Sapphire
Etching
Surface roughness
Scanning electron microscopy
gallium nitride
Electric potential

Keywords

  • Damage
  • Focused ion beam
  • Gallium nitride

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Micro-Raman spectroscopy and atomic force microscopy characterization of gallium nitride damaged by accelerated gallium ions. / Kim, Hong Youl; Ahn, Jaehui; Kim, Ji Hyun.

In: Journal of Ceramic Processing Research, Vol. 9, No. 1, 03.04.2008, p. 10-12.

Research output: Contribution to journalArticle

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