Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures

Ji Hyun Kim, J. A. Freitas, J. Mittereder, E. R. Glaser, D. S. Katzer, S. J. Pearton, F. Ren, S. Guo, B. Albert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ.J. Wang, R.C. Fitch, R. Fen
Pages129
Number of pages1
Volume1
Edition2
Publication statusPublished - 2005
Externally publishedYes
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Other

Other43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
CountryUnited States
CityLos Angeles, CA
Period05/10/1605/10/21

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High electron mobility transistors
Thermal stress
Heating

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kim, J. H., Freitas, J. A., Mittereder, J., Glaser, E. R., Katzer, D. S., Pearton, S. J., ... Albert, B. (2005). Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. In J. J. Wang, R. C. Fitch, & R. Fen (Eds.), ECS Transactions (2 ed., Vol. 1, pp. 129)

Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. / Kim, Ji Hyun; Freitas, J. A.; Mittereder, J.; Glaser, E. R.; Katzer, D. S.; Pearton, S. J.; Ren, F.; Guo, S.; Albert, B.

ECS Transactions. ed. / J.J. Wang; R.C. Fitch; R. Fen. Vol. 1 2. ed. 2005. p. 129.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, JH, Freitas, JA, Mittereder, J, Glaser, ER, Katzer, DS, Pearton, SJ, Ren, F, Guo, S & Albert, B 2005, Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. in JJ Wang, RC Fitch & R Fen (eds), ECS Transactions. 2 edn, vol. 1, pp. 129, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.
Kim JH, Freitas JA, Mittereder J, Glaser ER, Katzer DS, Pearton SJ et al. Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. In Wang JJ, Fitch RC, Fen R, editors, ECS Transactions. 2 ed. Vol. 1. 2005. p. 129
Kim, Ji Hyun ; Freitas, J. A. ; Mittereder, J. ; Glaser, E. R. ; Katzer, D. S. ; Pearton, S. J. ; Ren, F. ; Guo, S. ; Albert, B. / Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. ECS Transactions. editor / J.J. Wang ; R.C. Fitch ; R. Fen. Vol. 1 2. ed. 2005. pp. 129
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