Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures

Ji Hyun Kim, J. A. Freitas, J. Mittereder, E. R. Glaser, D. S. Katzer, S. J. Pearton, F. Ren, S. Guo, B. Albert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationECS Transactions
EditorsJ.J. Wang, R.C. Fitch, R. Fen
Pages129
Number of pages1
Volume1
Edition2
Publication statusPublished - 2005
Externally publishedYes
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

Other

Other43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
CountryUnited States
CityLos Angeles, CA
Period05/10/1605/10/21

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kim, J. H., Freitas, J. A., Mittereder, J., Glaser, E. R., Katzer, D. S., Pearton, S. J., Ren, F., Guo, S., & Albert, B. (2005). Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. In J. J. Wang, R. C. Fitch, & R. Fen (Eds.), ECS Transactions (2 ed., Vol. 1, pp. 129)