Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures

Jihyun Kim, J. A. Freitas, J. Mittereder, E. R. Glaser, D. S. Katzer, S. J. Pearton, F. Ren, S. Guo, B. Albert

Research output: Contribution to journalConference article

Original languageEnglish
Number of pages1
JournalECS Transactions
Volume1
Issue number2
Publication statusPublished - 2005
Externally publishedYes
Event43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
Duration: 2005 Oct 162005 Oct 21

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kim, J., Freitas, J. A., Mittereder, J., Glaser, E. R., Katzer, D. S., Pearton, S. J., Ren, F., Guo, S., & Albert, B. (2005). Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures. ECS Transactions, 1(2).