Microcathodoluminescence spectra evolution for planar and nanopillar multiquantum-well GaN-based structures as a function of electron irradiation dose

Eugene B. Yakimov, Paul S. Vergeles, Alexander Y. Polyakov, Han Su Cho, Lee Woon Jang, In-Hwan Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Effects of low energy electron beam irradiation (LEEBI) of planar and nanopillar InGaN/GaN multiquantum well light emitting diode structures are discussed. The bands observed in microcathodoluminescence (MCL) spectra were attributed to recombination involving two types of InGaN quantum dots with lower (2.92 eV MCL band) and higher (2.75 eV) indium concentration. During the LEEBI treatment, the intensity of both MCL lines first decreased, presumably due to the introduction of radiation defects, then, after the dose of 0.2 C/cm2 increased, reached a maximum and then again decreased. At the same time, the peak energy showed a red shift at low irradiation doses and a blue shift at high doses. The results are explained by an interplay between the increasing density of nonradiative recombination defects and quantum dots during irradiation. The difference between the nanopillar and planar structures is attributed to a stronger impact of surface defects in nanopillars.

Original languageEnglish
Article number011207
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

Fingerprint

Electron irradiation
electron irradiation
Dosimetry
Irradiation
dosage
irradiation
Semiconductor quantum dots
Electron beams
quantum dots
electron beams
Defects
Indium
planar structures
Surface defects
defects
surface defects
blue shift
red shift
Light emitting diodes
indium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Microcathodoluminescence spectra evolution for planar and nanopillar multiquantum-well GaN-based structures as a function of electron irradiation dose. / Yakimov, Eugene B.; Vergeles, Paul S.; Polyakov, Alexander Y.; Cho, Han Su; Jang, Lee Woon; Lee, In-Hwan.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 32, No. 1, 011207, 01.01.2014.

Research output: Contribution to journalArticle

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abstract = "Effects of low energy electron beam irradiation (LEEBI) of planar and nanopillar InGaN/GaN multiquantum well light emitting diode structures are discussed. The bands observed in microcathodoluminescence (MCL) spectra were attributed to recombination involving two types of InGaN quantum dots with lower (2.92 eV MCL band) and higher (2.75 eV) indium concentration. During the LEEBI treatment, the intensity of both MCL lines first decreased, presumably due to the introduction of radiation defects, then, after the dose of 0.2 C/cm2 increased, reached a maximum and then again decreased. At the same time, the peak energy showed a red shift at low irradiation doses and a blue shift at high doses. The results are explained by an interplay between the increasing density of nonradiative recombination defects and quantum dots during irradiation. The difference between the nanopillar and planar structures is attributed to a stronger impact of surface defects in nanopillars.",
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AU - Yakimov, Eugene B.

AU - Vergeles, Paul S.

AU - Polyakov, Alexander Y.

AU - Cho, Han Su

AU - Jang, Lee Woon

AU - Lee, In-Hwan

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N2 - Effects of low energy electron beam irradiation (LEEBI) of planar and nanopillar InGaN/GaN multiquantum well light emitting diode structures are discussed. The bands observed in microcathodoluminescence (MCL) spectra were attributed to recombination involving two types of InGaN quantum dots with lower (2.92 eV MCL band) and higher (2.75 eV) indium concentration. During the LEEBI treatment, the intensity of both MCL lines first decreased, presumably due to the introduction of radiation defects, then, after the dose of 0.2 C/cm2 increased, reached a maximum and then again decreased. At the same time, the peak energy showed a red shift at low irradiation doses and a blue shift at high doses. The results are explained by an interplay between the increasing density of nonradiative recombination defects and quantum dots during irradiation. The difference between the nanopillar and planar structures is attributed to a stronger impact of surface defects in nanopillars.

AB - Effects of low energy electron beam irradiation (LEEBI) of planar and nanopillar InGaN/GaN multiquantum well light emitting diode structures are discussed. The bands observed in microcathodoluminescence (MCL) spectra were attributed to recombination involving two types of InGaN quantum dots with lower (2.92 eV MCL band) and higher (2.75 eV) indium concentration. During the LEEBI treatment, the intensity of both MCL lines first decreased, presumably due to the introduction of radiation defects, then, after the dose of 0.2 C/cm2 increased, reached a maximum and then again decreased. At the same time, the peak energy showed a red shift at low irradiation doses and a blue shift at high doses. The results are explained by an interplay between the increasing density of nonradiative recombination defects and quantum dots during irradiation. The difference between the nanopillar and planar structures is attributed to a stronger impact of surface defects in nanopillars.

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