Micromagnetic simulation of critical fields of rectangular and elliptical cells for the toggle-mode magnetic random access memory

K. S. Kim, S. H. Lim

Research output: Contribution to journalArticle

Abstract

A micromagnetic simulation is carried out to examine the effects of the shape of exchange-coupled tri-layer cells on the magnetization switching behavior, in an effort to reduce the switching field in the toggle-mode magnetic random access memory. Two different shapes of rectangular and elliptical cells are considered. The switching behavior of the elliptical cells shows a qualitative agreement with the single domain model for 3D ellipsoids. However, the magnetization-flop field differs significantly, except for the small aspect ratio and the thickness asymmetry of the two magnetic layers. For the rectangular cells, the switching behavior differs significantly, particularly at a small aspect ratio, due to very strong demagnetizing fields, causing to form end domains. As the aspect ratio increases, the magnetization-flop field increases while the saturation field decreases. This opposite dependence of the two critical fields on the aspect ratio results in the decrease in the write window margin with increasing aspect ratio.

Original languageEnglish
Pages (from-to)3946-3949
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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