Microstructural and Microwave Dielectric Properties of Bi₁₂GeO₂₀ and Bi₂O₃-Deficient Bi₁₂GeO₂₀ Ceramics

Bi₁₂GeO₂₀ ceramics sintered at 800°C had dense microstructures, with an average grain size of 1.5 μm, a relative permittivity (ε_r) of 36.97, temperature coefficient of resonance frequency (τ_f) of -32.803 ppm/°C, and quality factor (Q × f) of 3137 GHz. The Bi_12-xGeO_20-1.5x ceramics were well sintered at both 800°C and 825°C, with average grain sizes exceeding 100 μm for x ≤ 1.0. However, the grain size decreased for x > 1.0 because of the Bi₄Ge₃O₁₂ secondary phase that formed at the grain boundaries. Bi_12-xGeO_20-1.5x (x ≤ 1.0) ceramics showed increased Q × f values of >10 000 GHz, although the ε_r and τ_f values were similar to those of Bi₁₂GeO₂₀ ceramics. The increased Q × f value resulted from the increased grain size. In particular, the Bi_11.6GeO_19.4 ceramic sintered at 825°C for 3 h showed good microwave dielectric properties of ε_r = 37.81, τ_f = -33.839 ppm/°C, and Q × f = 14 455 GHz.