Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers

Tae Yeon Seong, Do Geun Kim, Kwang Ki Choi, Young Joon Baik

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Abstract

The bias-enhanced nucleation (BEN) and growth of diamond by microwave plasma chemical vapor deposition have been investigated using transmission electron microscopy (TEM), transmission electron diffraction (TED), atomic force microscopy (AFM), and scanning electron microscopy (SEM) full stop TED results show epitaxial relations between SiC and Si, and diamond and SiC, which depend on the BEN time. The formation of highly oriented (001) diamond films is obtained after 25 min BEN, in which the heteroepitaxially oriented β-SiC and hence the heteroepitaxially oriented diamond crystallites play an important role. TEM reveals the β-SiC crystallites 2-10 nm in size and the diamond crystallites 5-30 nm across. As the nucleation time increases, the density of the β-SiC crystallites increases from ∼2.7×1011 to ∼1.6×1012 cm-2, while that of the diamond crystallites varies from ∼2.0×109 to ∼4.1×1010 cm-2. Discrepancy between the densities obtained using TEM and AFM is discussed.

Original languageEnglish
Pages (from-to)3368-3370
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number25
Publication statusPublished - 1997 Jun 23
Externally publishedYes

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crystallites
alternating current
diamonds
nucleation
wafers
silicon
transmission electron microscopy
electron diffraction
atomic force microscopy
diamond films
vapor deposition
microwaves
scanning electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Microstructural study of the alternating current bias-enhanced nucleation and growth of diamond on (001) silicon wafers. / Seong, Tae Yeon; Kim, Do Geun; Choi, Kwang Ki; Baik, Young Joon.

In: Applied Physics Letters, Vol. 70, No. 25, 23.06.1997, p. 3368-3370.

Research output: Contribution to journalArticle

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