Microstructural variation and dielectric properties of KTiNbO5 and K3Ti5NbO14 ceramics

Mir Im, Sang Hyo Kweon, Jin Seong Kim, Sahn Nahm, Ji Won Choi, Seong Ju Hwang

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


KTiNbO5 (KTN) and K3Ti5NbO14 (3K5TN) ceramics sintered at 1150 C and 1125 C, respectively, exhibited a dense, homogeneous microstructure with a high relative density (≥96% of the theoretical density). Abnormal grain growth occurred in both specimens during sintering, and large (002) and (001) grains developed in KTN and 3K5TN ceramics, respectively. A dielectric constant (εr) of 13 and a dielectric loss of 2.9% at 10 MHz were obtained from KTN ceramics sintered at 1150 C. The 3K5TN ceramics sintered at 1125 C showed an εr of 15 and a dielectric loss of 12% at 10 MHz. The resistivity of KTN and 3K5TN ceramics was low and their εr and dielectric loss values displayed low-frequency dispersion (LFD); the presence of K+ ions between the layers could be responsible for their low resistivity and LFD.

Original languageEnglish
Pages (from-to)5861-5867
Number of pages7
JournalCeramics International
Issue number4
Publication statusPublished - 2014 May


  • C. Dielectric properties
  • Layered metal-oxide
  • Multilayer ceramic capacitor
  • Nanosheets

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry


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