Microstructure and dielectric properties of amorphous BaSm2Ti4O12 thin films for MIM capacitor

Young Hun Jeong, Jong Bong Lim, Jae Chul Kim, Sahn Nahm, Ho Jung Sun, Hwack Joo Lee

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3 Citations (Scopus)

Abstract

BaSm2Ti4O12 (BST) film grown at room temperature was amorphous, while the film grown at 300 °C was also amorphous but contained a small amount of crystalline Sm2Ti2O7 (ST). The crystalline BST phase was formed when the film was grown at 700 °C and subjected to rapid thermal annealing (RTA) at 900 °C. On the other hand, the ST phase was formed in the film grown at 300 °C and subjected to RTA at 900 °C. A high capacitance density of 2.12 fF/μm2 and a low leakage current density of 1.15 fA/pF V were obtained from the 150 nm-thick BST film grown at 300 °C. Its capacitance density could conceivably be further increased by decreasing the thickness of the film. It had linear and quadratic coefficients of capacitance of -785 ppm/V and 5.8 ppm/V2 at 100 kHz, respectively. Its temperature coefficient of capacitance was also low, being approximately 255 ppm/°C at 100 kHz.

Original languageEnglish
Pages (from-to)2849-2853
Number of pages5
JournalJournal of the European Ceramic Society
Volume27
Issue number8-9 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 2

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Keywords

  • BaSmTiO
  • Capacitors
  • Electrical properties
  • Films

ASJC Scopus subject areas

  • Ceramics and Composites

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