Microstructure and resistive switching behavior of amorphous Pr 0.7Ca 0.3MnO3 films grown under various oxygen pressures

Kyu Bum Choi, Beom Seok Lee, Mi Ri Joung, Jong Hee Yoo, Won Kim, Sahn Nahm

Research output: Contribution to journalArticle

Abstract

Amorphous Pr 0.7Ca 0.3MnO3 (APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively.

Original languageEnglish
JournalECS Solid State Letters
Volume2
Issue number7
DOIs
Publication statusPublished - 2013 Jul 26

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Oxygen
Microstructure
Electric space charge
Leakage currents
Porosity
Surface roughness
Electrodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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Microstructure and resistive switching behavior of amorphous Pr 0.7Ca 0.3MnO3 films grown under various oxygen pressures. / Choi, Kyu Bum; Lee, Beom Seok; Joung, Mi Ri; Yoo, Jong Hee; Kim, Won; Nahm, Sahn.

In: ECS Solid State Letters, Vol. 2, No. 7, 26.07.2013.

Research output: Contribution to journalArticle

Choi, Kyu Bum ; Lee, Beom Seok ; Joung, Mi Ri ; Yoo, Jong Hee ; Kim, Won ; Nahm, Sahn. / Microstructure and resistive switching behavior of amorphous Pr 0.7Ca 0.3MnO3 films grown under various oxygen pressures. In: ECS Solid State Letters. 2013 ; Vol. 2, No. 7.
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