Microstructure of intrinsic ZnO thin film grown by using atomic layer deposition

Jae Sung Hur, Samseok Jang, Donghwan Kim, Dong Jin Byun, Chang Sik Son

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

ZnO thin films were deposited by using atomic layer deposition with a fixed purging time of the DEZinc and the H2O sources of 8 sec and an injection time of 1 sec per source. The ZnO films were formed in the temperature range from 30 °C to 300 °C. The microstructure was altered by varying the temperature, and the shapes and the sizes of the grains were altered by changing the preferred orientation. The surface morphologies and the shapes of the grains were correlated with the preferred orientation, which changed with the growth temperature.

Original languageEnglish
Pages (from-to)3033-3037
Number of pages5
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 2
Publication statusPublished - 2008 Nov 1

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atomic layer epitaxy
microstructure
thin films
purging
temperature
injection

Keywords

  • Atomic layer deposition (ALD)
  • Microstructure
  • Zinc oxide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Microstructure of intrinsic ZnO thin film grown by using atomic layer deposition. / Hur, Jae Sung; Jang, Samseok; Kim, Donghwan; Byun, Dong Jin; Son, Chang Sik.

In: Journal of the Korean Physical Society, Vol. 53, No. 5 PART 2, 01.11.2008, p. 3033-3037.

Research output: Contribution to journalArticle

Hur, Jae Sung ; Jang, Samseok ; Kim, Donghwan ; Byun, Dong Jin ; Son, Chang Sik. / Microstructure of intrinsic ZnO thin film grown by using atomic layer deposition. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 5 PART 2. pp. 3033-3037.
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