Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy

Tae Yeon Seong, In Tae Bae, Chel Jong Choi, D. Y. Noh, Y. Zhao, C. W. Tu

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001)GaN/sapphire at temperatures (Tg) in the range 500-760°C. TEM, TED, and XRD results indicate that the samples grown at Tg≤600°C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at Tg≥730°C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500°C layer, the two phases are randomly oriented and distributed, whereas the 600°C layer consists of phases that are elongated and inclined by 60°-70° clockwise from the [0001]α-GaN direction. The samples grown at Tg ≥730°C are found to consist of two types of microdomains, namely, GaN(P)I and GaN(P)II; the former having twin relation to the latter.

Original languageEnglish
Pages (from-to)3192-3197
Number of pages6
JournalJournal of Applied Physics
Volume85
Issue number6
Publication statusPublished - 1999 Mar 15
Externally publishedYes

Fingerprint

molecular beam epitaxy
microstructure
gases
x ray diffraction
electron diffraction
zinc
electron microscopes
molecular beams
synchrotrons
sapphire
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy. / Seong, Tae Yeon; Bae, In Tae; Choi, Chel Jong; Noh, D. Y.; Zhao, Y.; Tu, C. W.

In: Journal of Applied Physics, Vol. 85, No. 6, 15.03.1999, p. 3192-3197.

Research output: Contribution to journalArticle

Seong, Tae Yeon ; Bae, In Tae ; Choi, Chel Jong ; Noh, D. Y. ; Zhao, Y. ; Tu, C. W. / Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy. In: Journal of Applied Physics. 1999 ; Vol. 85, No. 6. pp. 3192-3197.
@article{3a61bd3a570f4c92b0271d437e3af61f,
title = "Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy",
abstract = "Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001)GaN/sapphire at temperatures (Tg) in the range 500-760°C. TEM, TED, and XRD results indicate that the samples grown at Tg≤600°C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at Tg≥730°C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500°C layer, the two phases are randomly oriented and distributed, whereas the 600°C layer consists of phases that are elongated and inclined by 60°-70° clockwise from the [0001]α-GaN direction. The samples grown at Tg ≥730°C are found to consist of two types of microdomains, namely, GaN(P)I and GaN(P)II; the former having twin relation to the latter.",
author = "Seong, {Tae Yeon} and Bae, {In Tae} and Choi, {Chel Jong} and Noh, {D. Y.} and Y. Zhao and Tu, {C. W.}",
year = "1999",
month = "3",
day = "15",
language = "English",
volume = "85",
pages = "3192--3197",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy

AU - Seong, Tae Yeon

AU - Bae, In Tae

AU - Choi, Chel Jong

AU - Noh, D. Y.

AU - Zhao, Y.

AU - Tu, C. W.

PY - 1999/3/15

Y1 - 1999/3/15

N2 - Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001)GaN/sapphire at temperatures (Tg) in the range 500-760°C. TEM, TED, and XRD results indicate that the samples grown at Tg≤600°C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at Tg≥730°C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500°C layer, the two phases are randomly oriented and distributed, whereas the 600°C layer consists of phases that are elongated and inclined by 60°-70° clockwise from the [0001]α-GaN direction. The samples grown at Tg ≥730°C are found to consist of two types of microdomains, namely, GaN(P)I and GaN(P)II; the former having twin relation to the latter.

AB - Transmission electron microscope (TEM), transmission electron diffraction (TED), and synchrotron x-ray diffraction (XRD) studies have been performed to investigate microstructural behavior of gas source molecular beam epitaxial GaN1-xPx layers grown on (0001)GaN/sapphire at temperatures (Tg) in the range 500-760°C. TEM, TED, and XRD results indicate that the samples grown at Tg≤600°C undergo phase separation resulting in a mixture of GaN-rich and GaP-rich GaNP with zinc-blende structure. However, the samples grown at Tg≥730°C are found to be binary zinc-blende GaN(P) single crystalline materials. As for the 500°C layer, the two phases are randomly oriented and distributed, whereas the 600°C layer consists of phases that are elongated and inclined by 60°-70° clockwise from the [0001]α-GaN direction. The samples grown at Tg ≥730°C are found to consist of two types of microdomains, namely, GaN(P)I and GaN(P)II; the former having twin relation to the latter.

UR - http://www.scopus.com/inward/record.url?scp=0006188842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006188842&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0006188842

VL - 85

SP - 3192

EP - 3197

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

ER -