Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

Myung Gil Kang, Jae Hyun Ahn, Jongwoon Lee, Dong Hoon Hwang, Hee Tae Kim, Jae-Sung Rieh, Dongmok Whang, Maeng Ho Son, Doyeol Ahn, Yun Seop Yu, Sung Woo Hwang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume49
Issue number6 PART 2
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

Field effect transistors
Nanowires
nanowires
field effect transistors
Microwaves
microwaves
Silicon
silicon
systems simulation
Coplanar waveguides
Scattering parameters
Cutoff frequency
Electrophoresis
equivalent circuits
Equivalent circuits
alternating current
cut-off
frequency ranges
alignment
waveguides

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire. / Kang, Myung Gil; Ahn, Jae Hyun; Lee, Jongwoon; Hwang, Dong Hoon; Kim, Hee Tae; Rieh, Jae-Sung; Whang, Dongmok; Son, Maeng Ho; Ahn, Doyeol; Yu, Yun Seop; Hwang, Sung Woo.

In: Japanese Journal of Applied Physics, Vol. 49, No. 6 PART 2, 01.06.2010.

Research output: Contribution to journalArticle

Kang, Myung Gil ; Ahn, Jae Hyun ; Lee, Jongwoon ; Hwang, Dong Hoon ; Kim, Hee Tae ; Rieh, Jae-Sung ; Whang, Dongmok ; Son, Maeng Ho ; Ahn, Doyeol ; Yu, Yun Seop ; Hwang, Sung Woo. / Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 6 PART 2.
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AU - Kim, Hee Tae

AU - Rieh, Jae-Sung

AU - Whang, Dongmok

AU - Son, Maeng Ho

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AU - Yu, Yun Seop

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