Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire

Myung Gil Kang, Jae Hyun Ahn, Jongwoon Lee, Dong Hoon Hwang, Hee Tae Kim, Jae Seong Rieh, Dongmok Whang, Maeng Ho Son, Doyeol Ahn, Yun Seop Yu, Sung Woo Hwang

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6 Citations (Scopus)

Abstract

Microwave (MW) characteristics of a field effect transistor (FET) incorporating a single silicon nanowire (SiNW) were obtained from S-parameter measurements in the frequency range of 0.05 to 20 GHz. The single SiNW was aligned, using the alternating current (ac) dielectrophoresis alignment method, between the drain and source electrode forming a coplanar waveguide (CPW) structure. Analysis of the FET was performed using equivalent circuit modeling by advanced device system (ADS) simulation. By fitting the measured data with the simulation results, the parameters of the single SiNW FET were obtained and the cutoff frequency was derived.

Original languageEnglish
Pages (from-to)06GG121-06GG124
JournalJapanese journal of applied physics
Volume49
Issue number6 PART 2
DOIs
Publication statusPublished - 2010 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kang, M. G., Ahn, J. H., Lee, J., Hwang, D. H., Kim, H. T., Rieh, J. S., Whang, D., Son, M. H., Ahn, D., Yu, Y. S., & Hwang, S. W. (2010). Microwave characterization of a field effect transistor with dielectrophoretically-aligned single silicon nanowire. Japanese journal of applied physics, 49(6 PART 2), 06GG121-06GG124. https://doi.org/10.1143/JJAP.49.06GG12