Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

Dong Kyun Yim, Jeong Ryeol Kim, Dong-Wan Kim, Kug Sun Hong

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The low sintering temperature and the good dielectric properties such as high dielectric constant (εr), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τf) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba3Ti4Nb4O21 ceramics were investigated as a function of B2O3-CuO content. Ba3Ti4Nb4O21 ceramics with B2O3 or CuO addition could be sintered above 1100 °C. However, the additions of both B2O3 and CuO successfully reduced the sintering temperature of Ba3Ti4Nb4O21 ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba3Ti4Nb4O21 ceramics were examined and discussed in the formation of the secondary phases. The Ba3Ti4Nb4O21 sample with 1 wt% B2O3 and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: εr = 65, Q × f = 16,000 GHz and τf = 101 ppm/°C.

Original languageEnglish
Pages (from-to)3053-3057
Number of pages5
JournalJournal of the European Ceramic Society
Volume27
Issue number8-9 SPEC. ISS.
DOIs
Publication statusPublished - 2007 Apr 2
Externally publishedYes

Fingerprint

Dielectric properties
Sintering
Microwaves
Temperature
Natural frequencies
Permittivity
boron oxide
X ray diffraction
Communication

Keywords

  • BaTiNbO
  • Borides
  • Carbides
  • Dielectric properties
  • Low-temperature sintering

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions. / Yim, Dong Kyun; Kim, Jeong Ryeol; Kim, Dong-Wan; Hong, Kug Sun.

In: Journal of the European Ceramic Society, Vol. 27, No. 8-9 SPEC. ISS., 02.04.2007, p. 3053-3057.

Research output: Contribution to journalArticle

@article{abc014141100484c85394b2e1cbebddd,
title = "Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions",
abstract = "The low sintering temperature and the good dielectric properties such as high dielectric constant (εr), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τf) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba3Ti4Nb4O21 ceramics were investigated as a function of B2O3-CuO content. Ba3Ti4Nb4O21 ceramics with B2O3 or CuO addition could be sintered above 1100 °C. However, the additions of both B2O3 and CuO successfully reduced the sintering temperature of Ba3Ti4Nb4O21 ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba3Ti4Nb4O21 ceramics were examined and discussed in the formation of the secondary phases. The Ba3Ti4Nb4O21 sample with 1 wt{\%} B2O3 and 3 wt{\%} CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: εr = 65, Q × f = 16,000 GHz and τf = 101 ppm/°C.",
keywords = "BaTiNbO, Borides, Carbides, Dielectric properties, Low-temperature sintering",
author = "Yim, {Dong Kyun} and Kim, {Jeong Ryeol} and Dong-Wan Kim and Hong, {Kug Sun}",
year = "2007",
month = "4",
day = "2",
doi = "10.1016/j.jeurceramsoc.2006.11.029",
language = "English",
volume = "27",
pages = "3053--3057",
journal = "Journal of the European Ceramic Society",
issn = "0955-2219",
publisher = "Elsevier BV",
number = "8-9 SPEC. ISS.",

}

TY - JOUR

T1 - Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

AU - Yim, Dong Kyun

AU - Kim, Jeong Ryeol

AU - Kim, Dong-Wan

AU - Hong, Kug Sun

PY - 2007/4/2

Y1 - 2007/4/2

N2 - The low sintering temperature and the good dielectric properties such as high dielectric constant (εr), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τf) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba3Ti4Nb4O21 ceramics were investigated as a function of B2O3-CuO content. Ba3Ti4Nb4O21 ceramics with B2O3 or CuO addition could be sintered above 1100 °C. However, the additions of both B2O3 and CuO successfully reduced the sintering temperature of Ba3Ti4Nb4O21 ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba3Ti4Nb4O21 ceramics were examined and discussed in the formation of the secondary phases. The Ba3Ti4Nb4O21 sample with 1 wt% B2O3 and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: εr = 65, Q × f = 16,000 GHz and τf = 101 ppm/°C.

AB - The low sintering temperature and the good dielectric properties such as high dielectric constant (εr), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τf) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba3Ti4Nb4O21 ceramics were investigated as a function of B2O3-CuO content. Ba3Ti4Nb4O21 ceramics with B2O3 or CuO addition could be sintered above 1100 °C. However, the additions of both B2O3 and CuO successfully reduced the sintering temperature of Ba3Ti4Nb4O21 ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba3Ti4Nb4O21 ceramics were examined and discussed in the formation of the secondary phases. The Ba3Ti4Nb4O21 sample with 1 wt% B2O3 and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: εr = 65, Q × f = 16,000 GHz and τf = 101 ppm/°C.

KW - BaTiNbO

KW - Borides

KW - Carbides

KW - Dielectric properties

KW - Low-temperature sintering

UR - http://www.scopus.com/inward/record.url?scp=33947665058&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947665058&partnerID=8YFLogxK

U2 - 10.1016/j.jeurceramsoc.2006.11.029

DO - 10.1016/j.jeurceramsoc.2006.11.029

M3 - Article

VL - 27

SP - 3053

EP - 3057

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

SN - 0955-2219

IS - 8-9 SPEC. ISS.

ER -