Abstract
BaTi4O9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO2/Si substrates and the dielectric properties of the BaTi4O9 film have been investigated at microwave frequency range. The homogeneous BaTi4O9 thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The circular-patch capacitor (CPC) was used to measure the microwave dielectric properties of the film. The dielectric constant (εr) and the dielectric loss (tan δ) were successfully measured up to 6 GHz. The εr of the BaTi4O9 thin film slightly increased with the increase of the film thickness. However, the tan δ decreased with increasing the thickness of the film. The εr of BaTi4O9 thin film was similar to that of the BaTi4O9 ceramics, which is about 36-39. The tan δ of the film with 460 nm thickness was very low approximately, 0.0001 at 1-3 GHz. Since BaTi4O9 film has a high εr and a low tan δ, the BaTi4 O9 film can be used as the microwave devices.
| Original language | English |
|---|---|
| Pages (from-to) | 2165-2168 |
| Number of pages | 4 |
| Journal | Journal of the European Ceramic Society |
| Volume | 26 |
| Issue number | 10-11 |
| DOIs | |
| Publication status | Published - 2006 Apr 11 |
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Keywords
- BaTiO
- Capacitors
- Dielectric properties
- Films
- Microstructure
ASJC Scopus subject areas
- Ceramics and Composites
Cite this
Microwave dielectric properties of BaTi4O9 thin film. / Lee, Suk Jin; Jang, Bo Yun; Jung, Young Hun; Nahm, Sahn; Lee, Hwack Joo; Kim, Young Sik.
In: Journal of the European Ceramic Society, Vol. 26, No. 10-11, 11.04.2006, p. 2165-2168.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Microwave dielectric properties of BaTi4O9 thin film
AU - Lee, Suk Jin
AU - Jang, Bo Yun
AU - Jung, Young Hun
AU - Nahm, Sahn
AU - Lee, Hwack Joo
AU - Kim, Young Sik
PY - 2006/4/11
Y1 - 2006/4/11
N2 - BaTi4O9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO2/Si substrates and the dielectric properties of the BaTi4O9 film have been investigated at microwave frequency range. The homogeneous BaTi4O9 thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The circular-patch capacitor (CPC) was used to measure the microwave dielectric properties of the film. The dielectric constant (εr) and the dielectric loss (tan δ) were successfully measured up to 6 GHz. The εr of the BaTi4O9 thin film slightly increased with the increase of the film thickness. However, the tan δ decreased with increasing the thickness of the film. The εr of BaTi4O9 thin film was similar to that of the BaTi4O9 ceramics, which is about 36-39. The tan δ of the film with 460 nm thickness was very low approximately, 0.0001 at 1-3 GHz. Since BaTi4O9 film has a high εr and a low tan δ, the BaTi4 O9 film can be used as the microwave devices.
AB - BaTi4O9 thin films have been prepared by RF magnetron sputtering on the Pt/Ti/SiO2/Si substrates and the dielectric properties of the BaTi4O9 film have been investigated at microwave frequency range. The homogeneous BaTi4O9 thin film was obtained when the film was grown at 550 °C and rapid thermal annealed (RTA) at 900 °C for 3 min. The circular-patch capacitor (CPC) was used to measure the microwave dielectric properties of the film. The dielectric constant (εr) and the dielectric loss (tan δ) were successfully measured up to 6 GHz. The εr of the BaTi4O9 thin film slightly increased with the increase of the film thickness. However, the tan δ decreased with increasing the thickness of the film. The εr of BaTi4O9 thin film was similar to that of the BaTi4O9 ceramics, which is about 36-39. The tan δ of the film with 460 nm thickness was very low approximately, 0.0001 at 1-3 GHz. Since BaTi4O9 film has a high εr and a low tan δ, the BaTi4 O9 film can be used as the microwave devices.
KW - BaTiO
KW - Capacitors
KW - Dielectric properties
KW - Films
KW - Microstructure
UR - http://www.scopus.com/inward/record.url?scp=33645547626&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645547626&partnerID=8YFLogxK
U2 - 10.1016/j.jeurceramsoc.2005.09.089
DO - 10.1016/j.jeurceramsoc.2005.09.089
M3 - Article
AN - SCOPUS:33645547626
VL - 26
SP - 2165
EP - 2168
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
IS - 10-11
ER -