Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO 2/poly-SiC substrates

T. J. Anderson, F. Ren, J. Kim, J. Lin, M. Hlad, B. P. Gila, L. Voss, S. J. Pearton, P. Bove, H. Lahreche, J. Thuret

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-Cut TM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f max) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

Original languageEnglish
Pages (from-to)384-387
Number of pages4
JournalJournal of Electronic Materials
Volume37
Issue number4
DOIs
Publication statusPublished - 2008 Apr
Externally publishedYes

Keywords

  • GaN
  • HEMT
  • Wide bandgap

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Anderson, T. J., Ren, F., Kim, J., Lin, J., Hlad, M., Gila, B. P., Voss, L., Pearton, S. J., Bove, P., Lahreche, H., & Thuret, J. (2008). Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO 2/poly-SiC substrates. Journal of Electronic Materials, 37(4), 384-387. https://doi.org/10.1007/s11664-007-0326-y