Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO 2/poly-SiC substrates

T. J. Anderson, F. Ren, Ji Hyun Kim, J. Lin, M. Hlad, B. P. Gila, L. Voss, S. J. Pearton, P. Bove, H. Lahreche, J. Thuret

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-Cut TM process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 μm gate length show cutoff frequencies (f T) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 μm and a maximum frequency of oscillation (f max) of 43 to 47 GHz. The f max values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

Original languageEnglish
Pages (from-to)384-387
Number of pages4
JournalJournal of Electronic Materials
Volume37
Issue number4
DOIs
Publication statusPublished - 2008 Apr 1
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
Microwaves
microwaves
Substrates
Aluminum Oxide
Cutoff frequency
Temperature control
Molecular beam epitaxy
Sapphire
Thermal conductivity
sapphire
molecular beam epitaxy
thermal conductivity
cut-off
oscillations
aluminum gallium nitride
Costs

Keywords

  • GaN
  • HEMT
  • Wide bandgap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO 2/poly-SiC substrates. / Anderson, T. J.; Ren, F.; Kim, Ji Hyun; Lin, J.; Hlad, M.; Gila, B. P.; Voss, L.; Pearton, S. J.; Bove, P.; Lahreche, H.; Thuret, J.

In: Journal of Electronic Materials, Vol. 37, No. 4, 01.04.2008, p. 384-387.

Research output: Contribution to journalArticle

Anderson, TJ, Ren, F, Kim, JH, Lin, J, Hlad, M, Gila, BP, Voss, L, Pearton, SJ, Bove, P, Lahreche, H & Thuret, J 2008, 'Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO 2/poly-SiC substrates', Journal of Electronic Materials, vol. 37, no. 4, pp. 384-387. https://doi.org/10.1007/s11664-007-0326-y
Anderson, T. J. ; Ren, F. ; Kim, Ji Hyun ; Lin, J. ; Hlad, M. ; Gila, B. P. ; Voss, L. ; Pearton, S. J. ; Bove, P. ; Lahreche, H. ; Thuret, J. / Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO 2/poly-SiC substrates. In: Journal of Electronic Materials. 2008 ; Vol. 37, No. 4. pp. 384-387.
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