Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/poly-SiC substrates

T. J. Anderson, F. Ren, J. Kim, J. Lin, M. Hlad, B. P. Gila, L. Voss, S. J. Pearton, P. Bove, H. Lahreche, J. Thuret

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