Microwave wireless power transmission a system perspective

J. Lin; A. Verma; J. Kim; S. W. Ko; W. Wu; F. Ren; S. Jang; S. J. Pearton

doi:10.1149/1.2357203

Microwave wireless power transmission a system perspective

J. Lin, A. Verma, J. Kim, S. W. Ko, W. Wu, F. Ren, S. Jang, S. J. Pearton

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

In this paper, the concept and the historical developments of wireless power transmission are reviewed and the challenges are discussed from a system perspective. By transmitting at microwave frequency, the electromagnetic wave beam can be focused to improve overall efficiency, However, lightweight high power microwave devices and circuits operating with high efficiency are required. Among various semiconductor technologies, GaN has the best power density and power handling capability. High efficiency rectifier circuits using GaN diodes are used as examples and detailed analysis is presented. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	127-140
Number of pages	14
Journal	ECS Transactions
Volume	3
Issue number	5
DOIs	https://doi.org/10.1149/1.2357203
Publication status	Published - 2006
Externally published	Yes
Event	State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: 2006 Oct 29 → 2006 Nov 3

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2357203

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title = "Microwave wireless power transmission a system perspective",

abstract = "In this paper, the concept and the historical developments of wireless power transmission are reviewed and the challenges are discussed from a system perspective. By transmitting at microwave frequency, the electromagnetic wave beam can be focused to improve overall efficiency, However, lightweight high power microwave devices and circuits operating with high efficiency are required. Among various semiconductor technologies, GaN has the best power density and power handling capability. High efficiency rectifier circuits using GaN diodes are used as examples and detailed analysis is presented. copyright The Electrochemical Society.",

author = "J. Lin and A. Verma and J. Kim and Ko, {S. W.} and W. Wu and F. Ren and S. Jang and Pearton, {S. J.}",

note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.; State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

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doi = "10.1149/1.2357203",

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TY - JOUR

T1 - Microwave wireless power transmission a system perspective

AU - Lin, J.

AU - Verma, A.

AU - Kim, J.

AU - Ko, S. W.

AU - Wu, W.

AU - Ren, F.

AU - Jang, S.

AU - Pearton, S. J.

PY - 2006

Y1 - 2006

N2 - In this paper, the concept and the historical developments of wireless power transmission are reviewed and the challenges are discussed from a system perspective. By transmitting at microwave frequency, the electromagnetic wave beam can be focused to improve overall efficiency, However, lightweight high power microwave devices and circuits operating with high efficiency are required. Among various semiconductor technologies, GaN has the best power density and power handling capability. High efficiency rectifier circuits using GaN diodes are used as examples and detailed analysis is presented. copyright The Electrochemical Society.

AB - In this paper, the concept and the historical developments of wireless power transmission are reviewed and the challenges are discussed from a system perspective. By transmitting at microwave frequency, the electromagnetic wave beam can be focused to improve overall efficiency, However, lightweight high power microwave devices and circuits operating with high efficiency are required. Among various semiconductor technologies, GaN has the best power density and power handling capability. High efficiency rectifier circuits using GaN diodes are used as examples and detailed analysis is presented. copyright The Electrochemical Society.

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U2 - 10.1149/1.2357203

DO - 10.1149/1.2357203

M3 - Conference article

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EP - 140

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 5

T2 - State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting

Y2 - 29 October 2006 through 3 November 2006

ER -

Microwave wireless power transmission a system perspective

Abstract

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