Millimeter-wave band CMOS RF phased-array transceiver IC designs for 5G applications

H. C. Park, D. Kang, J. Lee, D. Minn, Y. Aoki, K. Kim, S. Lee, D. Lee, S. Kim, J. Kim, W. Lee, C. Kim, S. Park, J. Park, B. Suh, J. Jang, M. Kim, K. Min, S. Jeon, A. S. RyuY. Kim, J. H. Lee, J. Son, S. G. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents design challenges and solutions for the fifth generation (5G) phased-array transceiver ICs in millimeter-wave (MMW) frequency bands. A 28nm bulk CMOS device technology is selected to integrate multiple RF phased-array elements in a single-chip to achieve a high-level of TX EIRP and RX sensitivity. Several design approaches of gain, POUT, stability, reliability and linearity enhancement techniques are applied to enable CMOS as a key device solution for 5G applications in MMW frequency bands. A 39GHz band 16-channel CMOS RF phased-array transceiver IC is designed and can support 4T/4R MIMO base-station applications including ×64 RF phased-array ICs (total 1, 024 phased-array elements). T/RX paths have gain dynamic ranges of >30/40dB for flexibility and scalability. The TX path shows POUT/Ch. of >6.0dBm at EVM of -34dB (800MHz) and PDC/Ch. of 105mW. The RX path performs NF of 4.2dB, EVM of -38dB (100MHz) and PDC/Ch. of 39mW. These state-of-the-art results lead to TX EIRP of >55dBm and RX sensitivity of <-113dBm/100MHz in the 5G NR base-station system.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages17.2.1-17.2.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - 2020 Dec 12
Externally publishedYes
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 2020 Dec 122020 Dec 18

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period20/12/1220/12/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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