Millimeter-wave GaAs monolithic multipliers

John Papapolymerou, Jack East, Linda P.B. Katehi, Moonil Kim, Imran Mehdi

Research output: Contribution to journalConference article

Abstract

This paper describes the design, fabrication and experimental results for planar monolithic multipliers with output frequencies in W and D band. The multipliers are fabricated using FGC (Finite Ground Coplanar) lines which provide a low loss, low dispersion near TEM structure. This structure allows circuit fabrication on full thickness wafers with no via holes. A variety of circuits have been designed and fabricated. Different W band multipliers have an output efficiency of 22.9%, a peak output power of 66 milliwatts and an output bandwidth greater than 8 GHz in W band. Initial D band results show an uncalibrated output of approximately 100 μW at 160 GHz.

Original languageEnglish
Pages (from-to)395-398
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume2
Publication statusPublished - 1998 Jan 1
EventProceedings of the 1998 IEEE MTT-S International Microwave Symposium. Part 1 (of 3) - Baltimore, MD, USA
Duration: 1998 Jun 71998 Jun 12

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Papapolymerou, J., East, J., Katehi, L. P. B., Kim, M., & Mehdi, I. (1998). Millimeter-wave GaAs monolithic multipliers. IEEE MTT-S International Microwave Symposium Digest, 2, 395-398.