MIM capacitors using BaSm2Ti4O12 and Sm2Ti2O7 dielectrics

Y. H. Jeong, B. J. Kim, B. Y. Jang, J. B. Lim, Sahn Nahm, H. J. Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The dielectric properties of BaSm2 Ti4 O12 (BST) and Sm2 Ti2 O7 (ST) films were investigated in order to evaluate their potential for use in metal-insulator-metal (MIM) capacitors. The crystalline BST phase was formed when the film was grown at 700°C and subjected to rapid thermal annealing (RTA) at 900°C. The ST phase was formed in the film grown at 300°C and subjected to RTA at 900°C. A high capacitance density of 4.84 fFμ m2 and a low leakage current density of 4.28 fApF V were obtained from the BST film with a thickness of 138 nm. The BST film has the linear and quadratic coefficients of capacitance of 684 ppmV and -295 ppm V2, respectively, and a temperature coefficient of capacitance of -136 ppm°C at 100 kHz. The ST film has a high capacitance density (3.47 fFμ m2) and a very low leakage current density (0.26 fApF V). The ST film also showed small voltage and temperature coefficients of capacitance. Therefore, both the BST and ST films are good candidate materials for MIM capacitors.

Original languageEnglish
Article number052608JES
JournalJournal of the Electrochemical Society
Volume153
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

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capacitors
Capacitors
Metals
insulators
Capacitance
capacitance
metals
Rapid thermal annealing
Leakage currents
leakage
Current density
coefficients
current density
annealing
Dielectric properties
dielectric properties
Crystalline materials
Temperature
temperature
Electric potential

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Jeong, Y. H., Kim, B. J., Jang, B. Y., Lim, J. B., Nahm, S., & Lee, H. J. (2006). MIM capacitors using BaSm2Ti4O12 and Sm2Ti2O7 dielectrics. Journal of the Electrochemical Society, 153(8), [052608JES]. https://doi.org/10.1149/1.2208909

MIM capacitors using BaSm2Ti4O12 and Sm2Ti2O7 dielectrics. / Jeong, Y. H.; Kim, B. J.; Jang, B. Y.; Lim, J. B.; Nahm, Sahn; Lee, H. J.

In: Journal of the Electrochemical Society, Vol. 153, No. 8, 052608JES, 01.08.2006.

Research output: Contribution to journalArticle

Jeong, Y. H. ; Kim, B. J. ; Jang, B. Y. ; Lim, J. B. ; Nahm, Sahn ; Lee, H. J. / MIM capacitors using BaSm2Ti4O12 and Sm2Ti2O7 dielectrics. In: Journal of the Electrochemical Society. 2006 ; Vol. 153, No. 8.
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