Abstract
Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.
| Original language | English |
|---|---|
| Title of host publication | Conference Record of the IEEE Photovoltaic Specialists Conference |
| DOIs | |
| Publication status | Published - 2008 Dec 1 |
| Event | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 2008 May 11 → 2008 May 16 |
Other
| Other | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
|---|---|
| Country | United States |
| City | San Diego, CA |
| Period | 08/5/11 → 08/5/16 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
Fingerprint Dive into the research topics of 'Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells'. Together they form a unique fingerprint.
Cite this
Kang, M. G., Tark, S. J., Lee, J. S., Lee, J. C., Yoon, K. H., Song, J., Lim, H. J., & Kim, D. (2008). Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922525] https://doi.org/10.1109/PVSC.2008.4922525