TY - GEN
T1 - Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells
AU - Kang, Min Gu
AU - Tark, Sung Ju
AU - Lee, Joon Sung
AU - Lee, Jeong Chul
AU - Yoon, Kyung Hoon
AU - Song, Jinsoo
AU - Lim, Hee Jin
AU - Kim, Donghwan
PY - 2008
Y1 - 2008
N2 - Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.
AB - Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.
UR - http://www.scopus.com/inward/record.url?scp=84879699379&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2008.4922525
DO - 10.1109/PVSC.2008.4922525
M3 - Conference contribution
AN - SCOPUS:84879699379
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -