Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells

Min Gu Kang, Sung Ju Tark, Joon Sung Lee, Jeong Chul Lee, Kyung Hoon Yoon, Jinsoo Song, Hee Jin Lim, Donghwan Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Passivation is the one of important factors in the solar cells. The measurement of effectiveness of the passivation layer was based on quasi-steady-state photoconductance. In the case of the sample which was passivated using p-type amorphous silicon(a-Si:H), the minority carrier lifetime was 8.9μs. When the passivation layer was intrinsic a-Si:H, the minority carrier lifetime was 221.3μs. Considering the minority carrier lifetimes of both samples, silicon heterojunction solar cells were fabricated with and without intrinsic a-Si:H layer. the efficiency of the sample passivated with intrinsic amorphous silicon was 13.52%, whereas it was only 11.58% when this layer was not employed.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
DOIs
Publication statusPublished - 2008 Dec 1
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: 2008 May 112008 May 16

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period08/5/1108/5/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

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    Kang, M. G., Tark, S. J., Lee, J. S., Lee, J. C., Yoon, K. H., Song, J., Lim, H. J., & Kim, D. (2008). Minority carrier lifetime of silicon wafer passivated by PECVD amorphous silicon layers for silicon heterojunction solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference [4922525] https://doi.org/10.1109/PVSC.2008.4922525