Abstract
We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.
| Original language | English |
|---|---|
| Pages (from-to) | 4295-4297 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 7 B |
| Publication status | Published - 2000 Dec 1 |
| Externally published | Yes |
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Keywords
- Ge(100)
- Heteroepitaxy
- Interface
- Mixed dimer
- Si(100)
- Surface formation energy
- Total energy
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth. / Ko, Young Jo; Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 7 B, 01.12.2000, p. 4295-4297.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth
AU - Ko, Young Jo
AU - Park, Kang Ho
AU - Ha, Jeong Sook
AU - Yun, Wan Soo
PY - 2000/12/1
Y1 - 2000/12/1
N2 - We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.
AB - We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.
KW - Ge(100)
KW - Heteroepitaxy
KW - Interface
KW - Mixed dimer
KW - Si(100)
KW - Surface formation energy
KW - Total energy
UR - http://www.scopus.com/inward/record.url?scp=0034227523&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034227523&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0034227523
VL - 39
SP - 4295
EP - 4297
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 B
ER -