Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth

Young Jo Ko, Kang Ho Park, Jeong Sook Ha, Wan Soo Yun

Research output: Contribution to journalArticle

Abstract

We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.

Original languageEnglish
Pages (from-to)4295-4297
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number7 B
Publication statusPublished - 2000 Dec 1
Externally publishedYes

Fingerprint

Dimers
dimers
Atoms
atoms
Adatoms
adatoms
energy

Keywords

  • Ge(100)
  • Heteroepitaxy
  • Interface
  • Mixed dimer
  • Si(100)
  • Surface formation energy
  • Total energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth. / Ko, Young Jo; Park, Kang Ho; Ha, Jeong Sook; Yun, Wan Soo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 7 B, 01.12.2000, p. 4295-4297.

Research output: Contribution to journalArticle

@article{27bcffa832504c16a9118a95cc2133e3,
title = "Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth",
abstract = "We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.",
keywords = "Ge(100), Heteroepitaxy, Interface, Mixed dimer, Si(100), Surface formation energy, Total energy",
author = "Ko, {Young Jo} and Park, {Kang Ho} and Ha, {Jeong Sook} and Yun, {Wan Soo}",
year = "2000",
month = "12",
day = "1",
language = "English",
volume = "39",
pages = "4295--4297",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7 B",

}

TY - JOUR

T1 - Mixed Ge-Si dimer formation in Ge/Si(100) and Si/Ge(100) growth

AU - Ko, Young Jo

AU - Park, Kang Ho

AU - Ha, Jeong Sook

AU - Yun, Wan Soo

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.

AB - We report on the energetics of the mixed Ge-Si dimer formation and adatom diffusion into subsurface layers for various dimcr structures on Si(100) and Ge(100) surfaces through first-principles total-energy calculations. On both Si and Ge(100) surfaces, the mixed dimer formation is found to be more favorable than the pure Si-Si and Ge-Ge dimer formation. For Ge atoms on Si(100), the diffusion into the subsurface layers is not energetically favorable and thus, the mixed Ge-Si dimer is stable against the subsurface diffusion. For Si atoms on Ge(100), the diffusion of Si into the subsurface layer, which segregates Ge atoms onto the surface, is found to be more favorable than remaining as part of mixed Ge-Si dimers.

KW - Ge(100)

KW - Heteroepitaxy

KW - Interface

KW - Mixed dimer

KW - Si(100)

KW - Surface formation energy

KW - Total energy

UR - http://www.scopus.com/inward/record.url?scp=0034227523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034227523&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034227523

VL - 39

SP - 4295

EP - 4297

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 B

ER -