Mixture behavior and microwave dielectric properties in the low-fired TiO2-CuO system

Dong Wan Kim, Byungwoo Park, Jang Hoon Chung, Kug Sun Hong

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Abstract

The mixture behavior and microwave dielectric properties of TiO2 doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO2 with 2% CuO had a quality factor of 14000, relative dielectric constant (εr) of 98, and a temperature coefficient of resonant frequency (τf) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO2 could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti02 showed a dependence on the mixture formation of TiO2 and CuO. More importantly, the εr of low-fired TiO2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO2 and CuO.

Original languageEnglish
Pages (from-to)2696-2700
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number5 A
Publication statusPublished - 2000 May 1

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Keywords

  • CuO
  • Low-firing
  • Microwave properties
  • Mixture
  • TiO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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