The mixture behavior and microwave dielectric properties of TiO2 doped with CuO sintered at around 900°C for 2 h were investigated using X-ray powder diffraction and a network analyzer. Low-fired TiO2 with 2% CuO had a quality factor of 14000, relative dielectric constant (εr) of 98, and a temperature coefficient of resonant frequency (τf) of 374 ppm/°C. The microwave dielectric properties of low-fired, CuO doped TiO2 could be interpreted by observing the dielectric properties of CuO high loss tangent (tan δ), low dielectric constant, and a negative temperature coefficient of resonant frequency. The microwave dielectric properties of low-fired, CuO doped Ti02 showed a dependence on the mixture formation of TiO2 and CuO. More importantly, the εr of low-fired TiO2 with CuO could be predicted by the logarithmic mixing model. Therefore, the variation of the microwave dielectric properties was attributed to the mixture behavior of TiO2 and CuO.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - 2000 May 1|
- Microwave properties
ASJC Scopus subject areas
- Physics and Astronomy(all)