Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Gyu Tae Kim, Thomas Chiarella, Thomas Hoffmann, Gérard Ghibaudo

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.

Original languageEnglish
Pages (from-to)195-201
Number of pages7
JournalSolid-State Electronics
Volume62
Issue number1
DOIs
Publication statusPublished - 2011 Aug
Externally publishedYes

Keywords

  • Effective mobility
  • FinFET
  • Low temperature measurement
  • Surface roughness scattering
  • Surface separation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Lee, J. W., Jang, D., Mouis, M., Kim, G. T., Chiarella, T., Hoffmann, T., & Ghibaudo, G. (2011). Mobility analysis of surface roughness scattering in FinFET devices. Solid-State Electronics, 62(1), 195-201. https://doi.org/10.1016/j.sse.2011.04.020