Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee, Doyoung Jang, Mireille Mouis, Gyu-Tae Kim, Thomas Chiarella, Thomas Hoffmann, Gérard Ghibaudo

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

This paper presents a mobility analysis of the surface roughness scattering along the different interfaces of FinFET devices. Using temperature dependent analysis of effective mobility, quantitative information about the influence of the roughness could be obtained directly on the device. The sidewall and top surface drain current components were estimated from the total drain currents of different fin width conditions. Using a conventional mobility model, it was possible to fit the gate voltage and temperature dependence of sidewall and top surface mobilities. This procedure allowed the contribution of the surface roughness scattering to be quantified with nondestructive characterization. Significant differences were observed for sidewalls and top surface. In the specific case under study, surface roughness scattering on sidewalls was about three times stronger than on top surface for n-channel FinFETs, whereas it remained similar for p-channel ones.

Original languageEnglish
Pages (from-to)195-201
Number of pages7
JournalSolid-State Electronics
Volume62
Issue number1
DOIs
Publication statusPublished - 2011 Aug 1
Externally publishedYes

Fingerprint

surface roughness
Surface roughness
Scattering
Drain current
scattering
fins
roughness
Temperature
temperature dependence
FinFET
Electric potential
electric potential
temperature

Keywords

  • Effective mobility
  • FinFET
  • Low temperature measurement
  • Surface roughness scattering
  • Surface separation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Lee, J. W., Jang, D., Mouis, M., Kim, G-T., Chiarella, T., Hoffmann, T., & Ghibaudo, G. (2011). Mobility analysis of surface roughness scattering in FinFET devices. Solid-State Electronics, 62(1), 195-201. https://doi.org/10.1016/j.sse.2011.04.020

Mobility analysis of surface roughness scattering in FinFET devices. / Lee, Jae Woo; Jang, Doyoung; Mouis, Mireille; Kim, Gyu-Tae; Chiarella, Thomas; Hoffmann, Thomas; Ghibaudo, Gérard.

In: Solid-State Electronics, Vol. 62, No. 1, 01.08.2011, p. 195-201.

Research output: Contribution to journalArticle

Lee, JW, Jang, D, Mouis, M, Kim, G-T, Chiarella, T, Hoffmann, T & Ghibaudo, G 2011, 'Mobility analysis of surface roughness scattering in FinFET devices', Solid-State Electronics, vol. 62, no. 1, pp. 195-201. https://doi.org/10.1016/j.sse.2011.04.020
Lee, Jae Woo ; Jang, Doyoung ; Mouis, Mireille ; Kim, Gyu-Tae ; Chiarella, Thomas ; Hoffmann, Thomas ; Ghibaudo, Gérard. / Mobility analysis of surface roughness scattering in FinFET devices. In: Solid-State Electronics. 2011 ; Vol. 62, No. 1. pp. 195-201.
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