Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon

Joo Youl Huh, T. Y. Tan, U. Gösele

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The partitioning of point defect species during diffusion controlled precipitation of a misfitting compound in Czochralski silicon is studied using the principle of maximum degradation rate of the total system free energy. The degradation rate of the system free energy is obtained from the entropy production due to mass diffusion in the matrix. The results are then compared with those obtained using the principle of maximum growth rate. It is shown that, for a precipitation process involving more than one chemical or structural component species with their concentrations deviating from the appropriate thermal equilibrium values, the maximum growth rate description does not generally correspond to that of the maximum degradation rate of the system free energy. The results are then applied to oxygen precipitation in silicon, showing some equilibrium characteristics pertinent to a multicomponent system with intrinsic point defects acting as pseudocomponents. It is also shown that, depending on the intrinsic point defect concentrations at the far field of diffusion, the oxide precipitate can grow either by emitting or by absorbing both vacancies and Si self-interstitials.

Original languageEnglish
Pages (from-to)5563-5571
Number of pages9
JournalJournal of Applied Physics
Volume77
Issue number11
DOIs
Publication statusPublished - 1995 Dec 1
Externally publishedYes

Fingerprint

point defects
silicon
free energy
degradation
species diffusion
far fields
precipitates
interstitials
entropy
oxides
oxygen
matrices

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon. / Huh, Joo Youl; Tan, T. Y.; Gösele, U.

In: Journal of Applied Physics, Vol. 77, No. 11, 01.12.1995, p. 5563-5571.

Research output: Contribution to journalArticle

@article{050c9b48075346cd9d0bef8ef09f851f,
title = "Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon",
abstract = "The partitioning of point defect species during diffusion controlled precipitation of a misfitting compound in Czochralski silicon is studied using the principle of maximum degradation rate of the total system free energy. The degradation rate of the system free energy is obtained from the entropy production due to mass diffusion in the matrix. The results are then compared with those obtained using the principle of maximum growth rate. It is shown that, for a precipitation process involving more than one chemical or structural component species with their concentrations deviating from the appropriate thermal equilibrium values, the maximum growth rate description does not generally correspond to that of the maximum degradation rate of the system free energy. The results are then applied to oxygen precipitation in silicon, showing some equilibrium characteristics pertinent to a multicomponent system with intrinsic point defects acting as pseudocomponents. It is also shown that, depending on the intrinsic point defect concentrations at the far field of diffusion, the oxide precipitate can grow either by emitting or by absorbing both vacancies and Si self-interstitials.",
author = "Huh, {Joo Youl} and Tan, {T. Y.} and U. G{\"o}sele",
year = "1995",
month = "12",
day = "1",
doi = "10.1063/1.359197",
language = "English",
volume = "77",
pages = "5563--5571",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon

AU - Huh, Joo Youl

AU - Tan, T. Y.

AU - Gösele, U.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - The partitioning of point defect species during diffusion controlled precipitation of a misfitting compound in Czochralski silicon is studied using the principle of maximum degradation rate of the total system free energy. The degradation rate of the system free energy is obtained from the entropy production due to mass diffusion in the matrix. The results are then compared with those obtained using the principle of maximum growth rate. It is shown that, for a precipitation process involving more than one chemical or structural component species with their concentrations deviating from the appropriate thermal equilibrium values, the maximum growth rate description does not generally correspond to that of the maximum degradation rate of the system free energy. The results are then applied to oxygen precipitation in silicon, showing some equilibrium characteristics pertinent to a multicomponent system with intrinsic point defects acting as pseudocomponents. It is also shown that, depending on the intrinsic point defect concentrations at the far field of diffusion, the oxide precipitate can grow either by emitting or by absorbing both vacancies and Si self-interstitials.

AB - The partitioning of point defect species during diffusion controlled precipitation of a misfitting compound in Czochralski silicon is studied using the principle of maximum degradation rate of the total system free energy. The degradation rate of the system free energy is obtained from the entropy production due to mass diffusion in the matrix. The results are then compared with those obtained using the principle of maximum growth rate. It is shown that, for a precipitation process involving more than one chemical or structural component species with their concentrations deviating from the appropriate thermal equilibrium values, the maximum growth rate description does not generally correspond to that of the maximum degradation rate of the system free energy. The results are then applied to oxygen precipitation in silicon, showing some equilibrium characteristics pertinent to a multicomponent system with intrinsic point defects acting as pseudocomponents. It is also shown that, depending on the intrinsic point defect concentrations at the far field of diffusion, the oxide precipitate can grow either by emitting or by absorbing both vacancies and Si self-interstitials.

UR - http://www.scopus.com/inward/record.url?scp=0000325783&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000325783&partnerID=8YFLogxK

U2 - 10.1063/1.359197

DO - 10.1063/1.359197

M3 - Article

AN - SCOPUS:0000325783

VL - 77

SP - 5563

EP - 5571

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

ER -