Modification of surface-state dispersion upon Xe adsorption: A scanning tunneling microscope study

J. Y. Park, U. D. Ham, Se-Jong Kahng, Y. Kuk, K. Miyake, K. Hata, H. Shigekawa

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The modification of the surface electronic structure by an adsorbate is measured quantitatively with scanning tunneling microscopy and spectroscopy for the first time. The standing wave of the Cu surface-state electrons is utilized to probe the subtle change in the electronic structure on the Xe-covered Cu(111). The observed Fermi wavelength on the Xe-covered surface is longer by 15% than on the bare Cu surface. The change upon Xe adsorption is explained with the observed modified dispersion of the Cu surface state; upward shift by (130±20) meV with almost same effective mass.

Original languageEnglish
Article number0R1634
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number24
DOIs
Publication statusPublished - 2000 Dec 15
Externally publishedYes

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Surface states
Microscopes
microscopes
Scanning
Adsorption
adsorption
Electronic structure
scanning
Scanning tunneling microscopy
Adsorbates
electronic structure
Spectroscopy
Wavelength
electron states
standing waves
Electrons
scanning tunneling microscopy
probes
shift
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Modification of surface-state dispersion upon Xe adsorption : A scanning tunneling microscope study. / Park, J. Y.; Ham, U. D.; Kahng, Se-Jong; Kuk, Y.; Miyake, K.; Hata, K.; Shigekawa, H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 24, 0R1634, 15.12.2000.

Research output: Contribution to journalArticle

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AU - Hata, K.

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