Modified low-temperature direct bonding method for vacuum microelectronics application

Byeong Kwon Ju, Duck Jung Lee, Woo Beom Choi, Yun Hi Lee, Jin Jang, Kwang Bae Lee, Myung Hwan Oh

Research output: Contribution to journalConference article

Abstract

This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had be to strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy (SIMS) analysis.

Original languageEnglish
Pages (from-to)342-348
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3046
DOIs
Publication statusPublished - 1997 Jun 19
EventSmart Structures and Materials 1997: Smart Electronics and MEMS - San Diego, United States
Duration: 1997 Mar 31997 Mar 6

Fingerprint

microelectronics
Microelectronics
Silicon
Vacuum
vacuum
silicon
Temperature
Glass bonding
Energy
glass
Process Parameters
Glass
Spectroscopy
Ensemble
Voltage
Experimental Results
energy
Ions
mass spectroscopy
Electric potential

Keywords

  • Anodic bonding
  • Silicon direct bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Modified low-temperature direct bonding method for vacuum microelectronics application. / Ju, Byeong Kwon; Lee, Duck Jung; Choi, Woo Beom; Lee, Yun Hi; Jang, Jin; Lee, Kwang Bae; Oh, Myung Hwan.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3046, 19.06.1997, p. 342-348.

Research output: Contribution to journalConference article

Ju, Byeong Kwon ; Lee, Duck Jung ; Choi, Woo Beom ; Lee, Yun Hi ; Jang, Jin ; Lee, Kwang Bae ; Oh, Myung Hwan. / Modified low-temperature direct bonding method for vacuum microelectronics application. In: Proceedings of SPIE - The International Society for Optical Engineering. 1997 ; Vol. 3046. pp. 342-348.
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N2 - This paper presents the process and experimental results for the improved silicon-to-glass bonding using silicon direct bonding (SDB) followed by anodic bonding. The initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon-glass ensemble using SDB method. Then the initially bonded specimen had be to strongly bonded by anodic bonding process. The effects of the bonding process parameters on the interface energy were investigated as functions of the bonding temperature and voltage. We found that the specimen which was bonded using SDB process followed by anodic bonding process had higher interface energy than one using anodic bonding process only. The main factor contributing to the higher interface energy in the glass-to-silicon assemble bonded by SDB followed by anodic bonding was investigated by secondary ion mass spectroscopy (SIMS) analysis.

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